- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄51253 > AGR19180EF (LSI CORP) 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | AGR19180EF |
| 廠商： | LSI CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | FM-4 |
| 文件頁(yè)數(shù)： | 9/10頁(yè) |
| 文件大?。?/td> | 228K |
| 代理商： | AGR19180EF |
8
Agere Systems Inc.
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
April 2004
AGR19180EF
Preliminary Data Sheet
Typical Performance Characteristics (continued)
Figure 8. Two-Carrier N-CDMA ACPR, IM3, Power Gain, Drain Efficiency versus Output Power
Figure 9. N-CDMA ACPR, Power Gain, Drain Efficiency versus Output Power
0
5
10
15
20
25
30
35
40
45
50
0
20
406080
100
Pout, OUTPUT POWER (WATTS) Avg.
G
p
s,
P
O
W
E
R
G
A
IN
(
d
Bm
),
E
F
ICI
E
N
CY
(
%
)
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
IR
L
,R
E
T
U
R
N
L
O
S
(d
B
),
IM
3
(
d
B
c
),
A
C
P
R
(d
B
c
)
Gps
ACPR
IM3
IRL
Efficiency
Vdd = 28 Vdc, Idq = 1600 mA
f 1 = 1958.75 MHz, f2 = 1961.25 MHz
2-Carrier N-CDMA
IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier.
9.72 dB Peak/Avg. Ratio @ 0.01% Probability (CCDF)
Channel Spacing (Bandwidth)
ACPR: 885 kHz (30 kHz), IM3: 2.5 MHz (1.2288 MHz)
0
5
10
15
20
25
30
35
40
45
50
0
20
40
60
80
100
Pout, OUTPUT POWER (WATTS), AVG.
GP
S
,P
O
W
E
R
GA
IN
,EF
F
IC
IE
N
C
Y
(
%
)
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
AD
JA
C
E
N
T
C
HAN
NE
L
P
O
W
E
R
A
T
IO
(
d
B
c
)
Gps
Vdd = 28 Vdc, Idq = 1600 mA
f = 1990 MHz Bandwidth = 1.2288 MHz
Channel Spacing ( Channel Bandwidth)
885 kHz (30 kHz), 1.25 MHz (12.5 kHz)
2.25 MHz (1MHz)
CDMA 9 Channel Forward
Pilot: 0, Paging: 1, Traffic: 8-13, Sinc: 32
Efficiency
885 kHz (30 kHz)
1.25 MHz (12.5 kHz)
2.25 MHz ( 1MHz)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AGR19180EF | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21030EF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21030EU | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21045EU | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21090EU | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AGR19K180EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21030EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21045EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21060E | 制造商:TRIQUINT 制造商全稱(chēng):TriQuint Semiconductor 功能描述:60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21060EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。