- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄67358 > AGR19030EF L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | AGR19030EF |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | FM-2 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 217K |
| 代理商： | AGR19030EF |
4
Agere Systems Inc.
30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
June 2004
AGR19030EF
Preliminary Data Sheet
Test Circuit Illustrations for AGR19030EF
A. Schematic
B. Component Layout
Parts List:
■
Microstrip line: Z1, 0.315 in. x 0.067 in.; Z2, 0.195 in. x 0.067 in.; Z3, 0.345 in. x 0.067 in.; Z4, 0.230 in. x 0.260 in.; Z5, 0.200 in. x 0.160 in.;
Z6, 0.395 in. x 0.675 in.; Z7, 0.355 in. x 0.640 in.; Z8, 0.645 in. x 0.130 in.; Z9, 0.145 in. x 0.067 in.; Z10, 0.535 in. x 0.067 in;
Z11, 0.345 in. x 0.030 in; Z12, 0.275 in. x 0.050 in.
■
ATC B case chip capacitors: C5, C22: 8.2 pF 100B8R2JCA500X; C6, C20: 10 pF 100B100JCA500X; C12: 100 pF 102B100JCA500X;
C13: 1000 pF 103B100JCA500X.
■
Kemet B case chip capacitors: C2, C16: 0.10 F CDR33VX104AKWS; tantalum capacitor: C17: 1 F 50 V T491C.
■
Vitramon 1206: C4, C14: 22000 F.
■
Sprague tantalum SMT (35 V): C1, C19, C23: 22 F; C18: 10 F.
■
Murata 0805: C3, C15: 0.01 F, GRM40X7R103K100AL.
■
Johanson Giga-Trim variable capacitors: C7, 0.4 pF—2.5 pF.
■
Fair-Rite ferrite bead: FB1: 2743019447.
■
Fixed film chip resistor: R1: 12
, 0.25 W, 0.08 x 0.13.
■
PCB etched circuit boards
■
Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness,
εr = 3.5.
Figure 2. AGR19030EF Test Circuit
DUT
R1
C3
Z11
C6
Z2
Z1
C20
Z7
Z8
Z10
RF INPUT
VGG
VDD
RF OUTPUT
Z4
Z3
FB1
Z12
C4
C5
C16
3
1
2
PINS: 1. DRAIN, 2. GATE, 3. SOURCE
C23
C13
C15
C14
C1
C2
C12
Z5
C7
C19
C18
C17
Z9
+
C22
++
+
Z6
23
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AGR19030EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21180EF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21180EF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AH118-89G | 60 MHz - 3500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| AH125-89G | 400 MHz - 3600 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AGR19045EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR19060E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19060EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR19060EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19090E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。