參數(shù)資料
型號(hào)： AGN2101H
英文描述： EMC® FEED-THRU TERMINAL
中文描述： 超小型封裝小井極化繼電器
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 103K
代理商： AGN2101H
GN
125
GN-RELAYS
ULTRA-SMALL PACKAGE
SLIM POLARIZED RELAY
5.70
±
0.3
.224
±
.012
10.60
0.3
.417
±
.012
9.00
±
0.3
.354
±
.012
5.70
±
0.3
.224
±
.012
10.60
0.3
.417
±
.012
Max.10.00
.394
mm
inch
FEATURES
Compact slim body saves space
Thanks to the small surface area of 5.7
mm
×
10.6 mm
.224 inch
low height of 9.0 mm
.354 inch
, the pack-
aging density can be increased to allow
for much smaller designs.
Outstanding surge resistance.
Surge withstand between open contacts:
1,500 V 10
×
160
μ
s (FCC part 68)
Surge withstand between contacts and
coil: 2,500 V 2
×
10
μ
s (Bellcore)
The use of twin crossbar contacts en-
sures high contact reliability.
AgPd contact is used because of its good
sulfide resistance. Adopting low-gas
molding material. Coil assembly molding
technology which avoids generating vola-
tile gas from coil.
Increased packaging density
×
.417 inch
and
Due to highly efficient magnetic circuit de-
sign, leakage flux is reduced and changes
in electrical characteristics from compo-
nents being mounted close-together are
minimized. This all means a packaging
density higher than ever before.
Nominal operating power: 140 mW
Outstanding vibration and shock re-
sistance.
Functional shock resistance:
750 m/s
{75G}
Destructive shock resistance:
1,000 m/s
{100G}
Functional vibration resistance:
10 to 55 Hz (at double amplitude of 3.3
mm
.130 inch
)
Destructive vibration resistance:
10 to 55 Hz (at double amplitude of 5 mm
.197 inch
)
2
2
SPECIFICATIONS
Contact
Arrangement
Initial contact resistance, max.
(By voltage drop 6 V DC 1A )
Remarks:
* Specifications will vary with foreign standards certification ratings.
*
Measurement at same location as "Initial breakdown voltage" section.
*
Detection current: 10mA.
*
Nominal voltage applied to the coil, excluding contact bounce time.
*
By resistive method, nominal voltage applied to the coil; contact carrying current:
1 A.
*
Half-wave pulse of sine wave: 6 ms; detection time: 10
*
Half-wave pulse of sine wave: 6 ms.
*
Detection time: 10
μ
s.
*
Refer to 5. Conditions for operation, transport and storage mentioned in
AMBIENT ENVIRONMENT (Page 61)
1
2
3
4
5
μ
s.
6
7
8
Characteristics
Initial insulation resistance*
Notes:
B
1 This value can change due to the switching frequency, environmental conditions,
and desired reliability level, therefore it is recommended to check this with the
actual load.
B
2 The upper limit for the ambient temperature is the maximum temperature that
can satisfy the coil temperature rise. Under the packing condition, allowable
temperature range is from –40 to +70
°
C
–40
°
to +158
°
F
.
2 Form C
100 m
Contact material
Stationary: AgPd+Au clad
Movable: AgPd
1 A 30 V DC
0.3 A 125 V AC
Rating
Nominal switching capacity
(resistive load)
Max. switching power
(resistive load)
Max. switching voltage
Max. switching current
Min. switching capacity
30 W, 37.5 V A
110 V DC, 125 V AC
1 A
10
μ
A 10 mV DC
140mW (1.5 to 12 V DC)
230mW (24 V DC)
100mW (1.5 to 12 V DC)
120mW (24 V DC)
5
×
10
B
1
Nominal
operating
power
Single side stable
1 coil latching
Expected
life (min.
operations)
Mechanical (at 180 cpm)
7
Electrical
(at 20 cpm)
1 A 30 V DC
resistive
0.3 A 125 V AC
resistive
10
5
10
5
1
Min. 1,000M
750 Vrms for 1min.
1,000 Vrms for 1min.
1,500 Vrms for 1min.
(at 500V DC)
Initial
breakdown
voltage*
2
Between open contacts
Between contact sets
Between contacts and coil
Between open contacts
(10
×
160
μ
s)
Between contacts and coil
(2
×
10
μ
s)
Initial surge
voltage
1,500 V (FCC Part 68)
2,500 V (Bellcore)
Operate time [Set time]*
3
(at 20
°
C)
Max. 4 ms (Approx. 2 ms)
[Max. 4 ms (Approx. 2 ms)]
Max. 4 ms (Approx. 1 ms)
[Max. 4 ms (Approx. 2 ms)]
Max. 50
Min. 750 m/s
Min. 1,000 m/s
10 to 55 Hz at double
amplitude of 3.3 mm
10 to 55 Hz at double
amplitude of 5 mm
–40
°
C to 85
–40
°
F to 185
Release time (without diode)
[Reset time]*
(at 20
Temperature rise*
3
°
C)
4
(at 20
°
C)
°
C
{75G]
{100G]
Shock resistance
Functional*
Destructive*
5
2
6
2
Vibration resistance
Functional*
7
Destructive
Conditions for opera-
tion, transport and
storage*
(Not freezing and con-
densing at low tem-
perature)
Unit weight
8
Ambient
temperature
B
2
°
C
°
F
Humidity
5 to 85% R.H.
Approx. 1 g
.035 oz
TESTING
相關(guān)PDF資料
PDF描述
AGN21024 EMC® FEED-THRU TERMINAL
AGN2104H EMC® DOUBLE TURRET FEED THRU
AH002R2-12 SPDT RF Reflective Switch
AH004R2-93 SPDT RF Reflective Switch
AH0605GH Voltage-Feedback Operational Amplifier
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AGN2101HJ 制造商:Panasonic Electric Works 功能描述:
AGN2101HZ 制造商:NAIS 制造商全稱:Nais(Matsushita Electric Works) 功能描述:ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY
AGN21024 功能描述:低信號(hào)繼電器 - PCB 2 Form C 1 Form A 30VDC PCB 24V RoHS:否 制造商:NEC 觸點(diǎn)形式:2 Form C (DPDT-BM) 觸點(diǎn)電流額定值: 線圈電壓:5 V 最大開關(guān)電流:1 A 線圈電流:1 A 線圈類型:Non-Latching 功耗:140 mW 端接類型:SMT 絕緣: 介入損耗:
AGN21024J 制造商:Panasonic Electric Works 功能描述:
AGN21024Z 制造商:NAIS 制造商全稱:Nais(Matsushita Electric Works) 功能描述:ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*