參數(shù)資料
型號： AG203-63G
廠商： TRIQUINT SEMICONDUCTOR INC
元件分類： 放大器
英文描述： 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝： GREEN, PLASTIC, MO-203, SOT-363, SMT, 6 PIN
文件頁數(shù)： 4/5頁
文件大小： 500K
代理商： AG203-63G
.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: info-sales@tqs.com
Web site: www.TriQuint.com
Page 4 of 5 August 2009
AG203-63
InGaP HBT Gain Block
Application Circuit
Recommended Component Values
Reference
Frequency (MHz)
Designator
50
500
900
1900
2200
2500
3500
L1
820 nH
220 nH
68 nH
27 nH
22 nH
18 nH
15 nH
C1, C2, C4
.018 F
1000 pF
100 pF
68 pF
56 pF
39 pF
2.
The proper values for the components are dependent upon the intended frequency of operation.
2.
The following values are contained on the evaluation board to achieve optimal broadband performance:
Ref. Desig.
Value / Type
Size
L1
39 nH wirewound inductor
0603
C1, C2
56 pF chip capacitor
0603
C3
0.018 F chip capacitor
0603
C4
Do Not Place
R1
47.5
1% tolerance
0603
Recommended Bias Resistor Values
S upply
Voltage
R1 value
S ize
5 V
47.5 ohms
0603
6 V
98 ohms
0603
7 V
148 ohms
0805
8 V
198 ohms
0805
9 V
248 ohms
1206
10 V
298 ohms
1210
12 V
398 ohms
1210
The proper value for R1 is dependent upon the supply
voltage and allows for bias stability over temperature.
WJ recommends a minimum supply bias of +5 V. A
1% tolerance resistor is recommended.
Typical Device Data
S-Parameters (Vdevice = +4.05 V, ICC = 20 mA, T = 25 C, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
-25.17
2.44
20.58
177.54
-23.20
1.82
-14.17
-3.37
250
-25.43
19.92
20.51
168.67
-23.93
4.61
-14.24
-8.75
500
-26.52
51.29
20.37
157.36
-23.52
3.76
-16.44
-18.23
750
-23.65
49.78
20.03
146.65
-23.46
5.05
-16.98
-30.04
1000
-22.07
40.71
19.64
136.55
-23.56
2.97
-17.77
-41.16
1250
-20.63
39.53
19.22
126.53
-23.03
6.36
-18.33
-55.53
1500
-19.78
35.18
18.75
117.55
-22.67
6.26
-18.95
-69.93
1750
-19.32
28.81
18.25
108.83
-22.55
8.11
-19.10
-85.56
2000
-18.82
22.65
17.69
100.49
-22.09
7.05
-19.08
-98.01
2250
-15.68
16.21
17.13
93.38
-21.84
7.56
-15.66
-96.28
2500
-16.33
9.66
16.75
88.14
-21.92
3.19
-16.65
-105.75
2750
-16.81
6.23
16.32
80.77
-21.04
4.47
-17.53
-113.94
3000
-17.51
4.58
15.86
74.01
-20.83
5.19
-19.10
-128.07
3250
-18.69
6.09
15.43
67.67
-20.59
5.81
-20.58
-142.56
3500
-19.88
9.58
15.01
61.27
-20.34
3.51
-22.15
-171.10
3750
-20.81
20.17
14.56
54.88
-19.86
1.07
-21.67
154.83
4000
-21.48
40.62
14.14
48.38
-19.12
0.00
-19.12
134.30
4250
-21.14
57.36
13.76
42.54
-19.02
-1.99
-16.77
118.64
4500
-19.74
72.23
13.30
36.58
-18.70
-6.17
-14.99
108.52
4750
-19.01
82.70
12.91
30.19
-18.67
-7.40
-14.02
104.45
5000
-18.41
89.08
12.54
24.69
-18.26
-10.48
-13.28
102.92
5250
-19.09
94.75
12.18
19.42
-18.05
-12.75
-13.13
100.56
5500
-20.88
99.20
11.82
14.41
-17.84
-14.26
-13.43
100.66
5750
-23.32
109.55
11.60
9.32
-17.44
-17.25
-14.24
103.15
6000
-27.64
125.83
11.35
4.32
-17.10
-20.45
-14.82
106.42
Device S-parameters are available for download from the website at: http://www.TriQuint.com
C1
Blocking
Capacitor
RF OUT
L1
RF Choke
C3
0.018 F
R1
Bias
Resistor
RF IN
C4
Bypass
Capacitor
C2
Blocking
Capacitor
Vcc
Icc = 20 mA
AG203-63
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