參數(shù)資料
型號(hào): AFP02N8-213
廠商: SKYWORKS SOLUTIONS INC
元件分類: 小信號(hào)晶體管
英文描述: X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 30K
代理商: AFP02N8-213
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 6/99A
General Purpose Packaged PHEMT Chips
Features
s Low Noise Figure, 1.55 dB @ 4 GHz
s High Associated Gain, 13 dB @ 4 GHz
s High MAG, > 15 dB @ 4 GHz
s 0.7
m Ti/Pd/Au Gates
s Passivated Surface
s Low Cost Metal Ceramic Package
s Available with Two Lead Lengths
s Available in Tape and Reel Packaging
Description
The AFP02N8-212, 213 are general purpose packaged
PHEMT chips that have excellent gain and noise
performance through X band, making them suitable for a
wide range of commercial applications. The devices
employ 0.7
m Ti/Pd/Au gates and surface passivation to
ensure a rugged, reliable part. Available in metal ceramic
packages with a choice of two lead lengths. The
components are also available in tape and reel and are
ready for automatic insertion equipment.
AFP02N8-212, AFP02N8-213
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Saturated Drain Current (IDSS)VDS = 2 V, VGS = 0 V
25.0
55.0
90.0
mA
Transconductance (gm)
VDS = 2 V, IDS = 15 mA
30.0
45.0
mS
Pinch-off Voltage (VP)
VDS = 2 V, IDS = 0.3 mA
-0.4
-1.2
-2.0
V
Gate to Source
IGS = -200 A
-6.0
8.0
V
Breakdown Voltage (Vbgs)
Noise Figure (NF)
VDS = 2 V, IDS = 15 mA, F = 4 GHz
1.55
2.0
dB
Associated Gain (GA)
12.0
13.2
dB
Electrical Specifications at 25°C
Source
Gate
Source
Drain
Source
Gate
Source
212
213
Characteristic
Value
Drain to Source Voltage (VDS)
6 V
Gate to Source Voltage (VGS)
-3 V
Drain Current (IDS)
IDSS
Gate Current (IGS)
10
A
Total Power Dissipation (PT)
300 mW
Storage Temperature (TST)
-65 to +150°C
Channel Temperature (TCH)
175°C
Absolute Maximum Ratings
相關(guān)PDF資料
PDF描述
AFP02N8-213 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
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