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參數(shù)資料
| 型號(hào)： | AFM02N6-213 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 35K |
| 代理商： | AFM02N6-213 |
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 6/99A
Low Noise Packaged
GaAs MESFET Chips
Features
s Low Noise Figure, 1.1 dB @ 12 GHz
s High Associated Gain, 8.0 dB @ 12 GHz
s High MAG, > 8.5 dB @ 12 GHz
s 0.25
m Ti/Pd/Au Gates
s Passivated Surface
s Low Cost Metal Ceramic Package
s Available with Two Lead Lengths
s Available in Tape and Reel Packaging
Description
The AFM02N6-212, 213 are low noise packaged GaAs
MESFET chips. They have excellent gain and noise
performance through Ku band, making them suitable for
a wide range of commercial applications. These devices
employ 0.25
m Ti/Pd/Au gates and surface passivation
to ensure a rugged, reliable part. They are available in a
metal ceramic package with a choice of two lead lengths.
The components are also available in tape and reel and
are ready for automatic insertion equipment.
AFM02N6-212, AFM02N6-213
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Saturated Drain Current (IDSS)VDS = 2 V, VGS = 0 V
25.0
40.0
90.0
mA
Transconductance (gm)
VDS = 2 V, IDS = 15 mA
30.0
60.0
mS
Pinch-off Voltage (VP)
VDS = 2 V, IDS = 0.3 mA
-0.5
-1.0
-2.0
V
Gate to Source
IGS = -200 A
-4.0
-5.5
V
Breakdown Voltage (Vbgs)
Noise Figure (NF)
VDS = 2 V, IDS = 15 mA, F = 4 GHz
0.6
0.8
dB
Associated Gain (GA)
11.0
14.0
dB
Noise Figure (NF)
VDS = 2 V, IDS = 15 mA, F = 12 GHz
1.1
1.4
dB
Associated Gain (GA)
7.0
8.0
dB
Electrical Specifications at 25°C
Source
Gate
Source
Drain
Source
Gate
Source
212
213
Characteristic
Value
Drain to Source Voltage (VDS)
4 V
Gate to Source Voltage (VGS)
-2 V
Drain Current (IDS)
IDSS
Gate Current (IGS)
10
A
Total Power Dissipation (PT)
200 mW
Storage Temperature (TST)
-65 to +150°C
Channel Temperature (TCH)
175°C
Absolute Maximum Ratings
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| AFM02N6-212 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
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| AFP02N8-56 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| AFP02N8-55 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
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