參數(shù)資料
型號(hào)： AF9945NSA
廠商： INTEGRATED CIRCUIT TECHNOLOGY CORP
元件分類(lèi)： JFETs
英文描述： 3.3 A, 60 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁(yè)數(shù)： 2/5頁(yè)
文件大小： 452K
代理商： AF9945NSA
AF9945N
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Sep 5, 2005
2/5
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±25
V
TA=25C
3.3
ID
Continuous Drain Current (Note 1)
TA=70C
2.7
A
IDM
Pulsed Drain Current (Note 2)
20
A
Total Power Dissipation
2
W
PD
Linear Derating Factor
TA=25C
0.016
W/C
TSTG
Storage Temperature Range
-55 to 150
C
TJ
Operating Junction Temperature Range
-55 to 150
C
Thermal Data
Symbol
Parameter
Maximum
Units
Rthj-amb
Thermal Resistance Junction-ambient (Note 1)
Max.
62.5
C/W
Electrical Characteristics at T
J=25C unless otherwise specified
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
60
-
V
BVDSS / TJ
Breakdown Voltage Temperature
Coefficient
Reference to 25
oC,
ID=1mA
-
0.04
-
V/
oC
VGS=10V, ID=3A
-
100
RDS(ON)
Static Drain-Source
On-Resistance (Note 3)
VGS=4.5V, ID=2A
-
125
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=3A
-
6
-
S
Drain-Source Leakage Current
(TJ=25
oC)
VDS=60V, VGS=0V
-
10
IDSS
Drain-Source Leakage Current
(TJ=70
oC)
VDS=48V, VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=±25V
-
±100
nA
Qg
Total Gate Charge (Note 3)
-
6
10
Qgs
Gate-Source Charge
-
2
-
Qgd
Gate-Drain (“Miller”) Charge
ID=3A,
VDS=48V,
VGS=4.5V
-
3
-
nC
td(on)
Turn-On Delay Time (Note 3)
-
6
-
tr
Rise Time
-
5
-
td(off)
Turn-Off Delay Time
-
16
-
tf
Fall-Time
VDS=30V,
ID=1A,
RG=3.3, VGS=10V
RD=30
-
3
-
ns
Ciss
Input Capacitance
-
510
810
Coss
Output Capacitance
-
55
-
Crss
Reverse Transfer Capacitance
VGS=0V,
VDS=25V,
f=1.0MHz
-
35
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.3
-
nA
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VSD
Forward On Voltage (Note 3)
IS=1.7A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time (Note 3)
-
27
-
ns
Qrr
Reverse Recovery Charge
IS=4A, VGS=0V,
dl/dt=100A/s
-
32
-
nC
Note 1: Surface mounted on 1 in
2 copper pad of FR4 board, t≤10 sec; 135oC/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.
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