參數(shù)資料
型號(hào)： AF9926NSL
英文描述： N-Channel Enhancement Mode Power MOSFET
中文描述： N溝道增強(qiáng)模式功率MOSFET
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 419K
代理商： AF9926NSL
AF9926N
N-Channel Enhancement Mode Power MOSFET
Features
- Capable of 2.5V Gate Drive
- Low On-resistance
- Low Drive Current
- Surface Mount Package
Product Summary
BV
DSS
(V)
R
DS(ON)
(m
)
20
30
Pin Assignments
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Sep 5, 2005
1/6
I
D
(A)
6
SO-8
5
6
7
8
4
3
2
1
D1
D1
D2
D2
S1
G1
S2
G2
General Description
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
Pin Descriptions
Pin Name
S1/2
G1/2
D1/2
Description
Source
Gate
Drain
Ordering information
A
X 9926N X X X
PN
Package
Feature
F :MOSFET
S: SO-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
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