參數(shù)資料
型號: AF9902M
英文描述: 2N and 2P-Channel Enhancement Mode Power MOSFET
中文描述: 2N和二路溝道增強型功率MOSFET
文件頁數(shù): 1/8頁
文件大小: 799K
代理商: AF9902M
AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET
Features
- Simple Drive Requirement
- Low On-Resistance
- Full Bridge Application on LCD Monitor Inverter
- Pb Free Plating Product
Product Summary
CH
BV
DSS
(V)
R
DS(ON)
(m
)
N
30
40
P
-30
70
Pin Assignments
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Sep 22, 2005
1/8
I
D
(A)
4.3
-3.3
SO-8
5
6
7
8
4
3
2
1
P1G
P1S/P2S
N2D/P2D
P2G
N1G
N1D/P1D
N1S/N2S
N2G
General Description
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SO-8 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
Pin Descriptions
Pin Name
Description
N1G
Gate (NMOS1)
N1D/P1D
Drain(NMOS1) / Drain(PMOS1)
N1S/N2S
Source(NMOS1) / Source(NMOS2)
N2G
Gate (NMOS2)
P2G
Gate (PMOS2)
N2D/P2D
Drain(NMOS2) / Drain(PMOS2)
P1S/P2S
Source(PMOS1) / Source(PMOS2)
P1G
Gate (PMOS1)
Ordering information
A X 9902M X X
PN
Package
Feature
F :MOSFET
S: SO-8
Packing
Blank : Tube or Bulk
A : Tape & Reel
Block Diagram
P1S
P2S
N1S
N2S
N2G
N1G
P1G
P2G
P1N1D
P2N2D
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