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參數(shù)資料
| 型號： | AF9901MSA |
| 廠商： | INTEGRATED CIRCUIT TECHNOLOGY CORP |
| 元件分類： | JFETs |
| 英文描述： | 5.5 A, 30 V, 0.033 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SO-8 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 839K |
| 代理商： | AF9901MSA |
AF9901M
2N and 2P-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Sep 22, 2005
3/8
Electrical Characteristics (T
J=25C unless otherwise specified)
Limits
Symbol
Parameter
Test Conditions
CH
Min.
Typ.
Max.
Unit
N
-
7
-
td(on)
Turn-On Delay Time (Note 3)
P
-
11
-
N
-
10
-
tr
Rise Time
P
-
8
-
N
-
18
-
td(off)
Turn-Off Delay Time
P
-
20
-
N
-
8
-
tf
Fall-Time
N-Channel
VDS=15V, VGS=10V
ID=1A, RG=6,
RD=15
P-Channel
VDS=-15V, VGS=-10V
ID=-1A, RG=6,
RD=15
P
-
18
-
ns
N
-
600
960
Ciss
Input Capacitance
P
-
490
790
N
-
229.8
-
Coss
Output Capacitance
P
-
190
-
N
-
94
-
Crss
Reverse Transfer Capacitance
N-Channel
VGS=0V, VDS=25V
f=1.0MHz
P-Channel
VGS=0V, VDS=-25V
f=1.0MHz
P
-
130
-
pF
Source-Drain Diode
Limits
Symbol
Parameter
Test Conditions
CH
Min.
Typ.
Max.
Unit
IS=1.2A, VGS=0V
N
-
1.2
VSD
Forward On Voltage (Note 3)
IS=-1.2A, VGS=0V
P
-
-1.2
V
N
-
21
-
trr
Reverse Recovery Time
P
-
21
-
ns
N
-
16
-
Qrr
Reverse Recovery Charge
N-Channel
IS=1.7A, VGS=0V
dl/dt=100A/s
P-Channel
IS=-1.7A, VGS=0V
dl/dt=-100A/s
P
-
15
-
nC
Note 1: Surface Mounted on 1 in
2 copper pad of FR4 board; t ≤10sec; 186C/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature
Note 3: Pulse width < 300us, duty cycle < 2%.
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