- 您現(xiàn)在的位置：買賣IC網 > PDF目錄51251 > AF9478PDA (INTEGRATED CIRCUIT TECHNOLOGY CORP) 10 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 PDF資料下載
參數資料
| 型號： | AF9478PDA |
| 廠商： | INTEGRATED CIRCUIT TECHNOLOGY CORP |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數： | 2/5頁 |
| 文件大?。?/td> | 417K |
| 代理商： | AF9478PDA |
AF9478P
P-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Sep 6, 2005
2/5
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-60
V
VGS
Gate-Source Voltage
±25
V
TC=25C
-10
ID
Continuous Drain Current, VGS=10V
TC=100C
-6
A
IDM
Pulsed Drain Current (Note 1)
45
A
Total Power Dissipation
TC=25C
28
W
PD
Linear Derating Factor
0.23
W/C
TSTG
Storage Temperature Range
-55 to 150
C
TJ
Operating Junction Temperature Range
-55 to 150
C
Thermal Data
Symbol
Parameter
Maximum
Units
RθJC
Thermal Resistance Junction-Case
Max.
4.5
C/W
RθJA
Thermal Resistance Junction- Ambient
Max.
110
C/W
Electrical Characteristics (T
J=25C unless otherwise noted)
Limits
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA
-60
-
V
BVDSS/TJ
Breakdown Voltage Temperature
Coefficient
Reference to 25C,
ID=-1mA
-
-0.06
-
V/C
VGS=-10V, ID=-5A
-
160
RDS(ON)
Static Drain-Source
On-Resistance (Note 2)
VGS=-4.5V, ID=-3A
-
200
m
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-5A
-
6
-
S
Drain-Source Leakage
Current(TJ=25C)
VDS=-60V, VGS=0V
-
-10
IDSS
Drain-Source Leakage
Current(TJ=150C)
VDS=-48V, VGS=0V
-
-25
uA
IGSS
Gate Source Leakage
VGS=±25V
-
±100
nA
Qg
Total Gate Charge (Note 2)
-
10
16
Qgs
Gate-Source Charge
-
2
-
Qgd
Gate-Drain (“Miller”) Charge
ID=-5A
VDS=-48V
VGS=-4.5V
-
4
-
nC
td(on)
Turn-On Delay Time (Note 2)
-
10
-
tr
Rise Time
-
13
-
td(off)
Turn-Off Delay Time
-
34
-
tf
Fall-Time
VDS=-30V
ID=-5A
RG=3.3, VGS=-10V
RD=6
-
29
-
nS
Ciss
Input Capacitance
-
760
1220
Coss
Output Capacitance
-
80
-
Crss
Reverse Transfer Capacitance
VGS=0V
VDS=-25V,
f=1.0MHz
-
60
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VSD
Forward On Voltage (Note 2)
IS=-5A, VGS=0V
-
-1.2
V
trr
Reverse Recovery Time (Note 2)
-
45
-
ns
Qrr
Reverse Recovery Charge
IS=-5A, VGS=0V,
Dl/dt=-100A/s
-
107
-
nC
相關PDF資料 |
PDF描述 |
|---|---|
| AF9478PD | 10 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AF9901MS | 5.5 A, 30 V, 0.033 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| AF9901MSA | 5.5 A, 30 V, 0.033 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| AF9926NSL | 6 A, 20 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| AF9926NS | 6 A, 20 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AF-9530 | 制造商:Murata Manufacturing Co Ltd 功能描述:HYBRID MICROWAVE MODULE - Bulk |
| AF95-30-11-70 | 制造商:ABB Low Voltage Products and Systems 功能描述:3P CONTR,100-250V AC/DC |
| AF-9530A | 制造商:Murata Manufacturing Co Ltd 功能描述:HYBRID MICROWAVE MODULE - Bulk |
| AF-9530A-SAMPLE | 制造商:Murata Manufacturing Co Ltd 功能描述:HYBRID MICROWAVE MODULE - Bulk |
| AF-9530-SAMPLE | 制造商:Murata Manufacturing Co Ltd 功能描述:HYBRID MICROWAVE MODULE - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復。