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參數(shù)資料
| 型號(hào)： | AF9410NSL |
| 廠商： | INTEGRATED CIRCUIT TECHNOLOGY CORP |
| 元件分類： | JFETs |
| 英文描述： | 9.6 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SO-8 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 455K |
| 代理商： | AF9410NSL |
AF9410N
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.4 Aug 23, 2005
2/5
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±25
V
TA=25C
9.6
ID
Continuous Drain Current (Note 1)
TA=70C
7.7
A
IDM
Pulsed Drain Current (Note 2)
40
A
Total Power Dissipation
2.5
W
PD
Linear Derating Factor
TA=25C
0.02
W/C
TSTG
Storage Temperature Range
-55 to 150
C
TJ
Operating Junction Temperature Range
-55 to 150
C
Thermal Data
Symbol
Parameter
Maximum
Units
Rthj-amb
Thermal Resistance Junction-ambient (Note 1)
Max.
50
C/W
Electrical Characteristics at T
J=25C unless otherwise specified
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
30
-
V
BVDSS / TJ
Breakdown Voltage Temperature
Coefficient
Reference to 25
oC,
ID=1mA
-
0.04
-
V/
oC
VGS=10V, ID=9A
-
13
18
RDS(ON)
Static Drain-Source
On-Resistance (Note 3)
VGS=4.5V, ID=7A
-
21
28
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=9A
-
13
-
S
Drain-Source Leakage Current
(TJ=25
oC)
VDS=30V, VGS=0V
-
1
IDSS
Drain-Source Leakage Current
(TJ=70
oC)
VDS=24V, VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=±25V
-
±100
nA
Qg
Total Gate Charge (Note 3)
-
11
18
Qgs
Gate-Source Charge
-
3
-
Qgd
Gate-Drain (“Miller”) Charge
ID=9A,
VDS=20V,
VGS=4.5V
-
7
-
nC
td(on)
Turn-On Delay Time (Note 3)
-
10
-
tr
Rise Time
-
6
-
td(off)
Turn-Off Delay Time
-
23
-
tf
Fall-Time
VDS=15V,
ID=1A,
RG=3.3, VGS=10V
RD=15
-
7
-
ns
Ciss
Input Capacitance
-
840
1350
Coss
Output Capacitance
-
190
-
Crss
Reverse Transfer Capacitance
VGS=0V,
VDS=25V,
f=1.0MHz
-
140
-
pF
RG
Gate Resistance
f=1.0MHz
-
1.4
2.1
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VSD
Forward On Voltage (Note 3)
IS=2.1A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
-
18
-
ns
Qrr
Reverse Recovery Charge
IS=9A, VGS=0V,
dl/dt=100A/s
-
8
-
nC
Note 1: Surface mounted on 1 in
2 copper pad of FR4 board, t ≤ 10 sec; 125oC/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.
相關(guān)PDF資料 |
PDF描述 |
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| AF9410NSLA | 9.6 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AF9410NSA | 9.6 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AF9435PSLA | 5.3 A, 30 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET |
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| AF9435PS | 5.3 A, 30 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AF9410NSLA | 制造商:ANACHIP 制造商全稱:Anachip Corp 功能描述:N-Channel 30-V (D-S) MOSFET |
| AF9412N | 制造商:ANACHIP 制造商全稱:Anachip Corp 功能描述:N-Channel 30-V (D-S) MOSFET |
| AF9412NS | 制造商:ANACHIP 制造商全稱:Anachip Corp 功能描述:N-Channel 30-V (D-S) MOSFET |
| AF9412NSA | 制造商:ANACHIP 制造商全稱:Anachip Corp 功能描述:N-Channel 30-V (D-S) MOSFET |
| AF9412NSLA | 制造商:ANACHIP 制造商全稱:Anachip Corp 功能描述:N-Channel 30-V (D-S) MOSFET |
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