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參數(shù)資料
| 型號(hào)： | AF9410N |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 359K |
| 代理商： | AF9410N |
AF9410N
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Anachip Corp.
www.anachip.com.tw Rev. 1.3 Nov 19, 2004
2/5
Parameter
Rating
30
±25
9.6
7.7
40
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
T
A
=25oC
I
D
Continuous Drain Current
(Note 1)
T
A
=70oC
Pulsed Drain Current
(Note 2)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
A
I
DM
A
W
P
D
T
A
=25oC
W/oC
oC
oC
T
STG
T
J
Thermal Data
Symbol
Rthj-amb
Electrical Characteristics
at T
J
=25oC unless otherwise specified
Symbol
Parameter
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=250uA
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance
(Note 3)
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-Source Leakage Current
(T
J
=25
C)
I
DSS
Drain-Source Leakage Current
(T
J
=70
C)
I
GSS
Gate-Source Leakage
Q
g
Total Gate Charge
(Note 3)
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain (“Miller”) Charge
t
d(on)
Turn-On Delay Time
(Note 3)
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall-Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
Source-Drain Diode
Symbol
Parameter
V
SD
Forward On Voltage
(Note 3)
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Note 1:
Surface mounted on 1 in
copper pad of FR4 board, t
≤
10 sec; 125
o
C/W when mounted on Min. copper pad.
Note 2:
Pulse width limited by Max. junction temperature.
Note 3:
Pulse width
≤
300us, duty cycle
≤
2%.
Parameter
Maximum
50
Units
oC/W
Thermal Resistance Junction-ambient
(Note 1)
Max.
Test Conditions
Min.
30
Typ.
-
Max.
-
Units
V
BV
DSS
/
T
J
Reference to 25
o
C,
I
D
=1mA
V
GS
=10V, I
D
=9A
V
GS
=4.5V, I
D
=7A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=9A
-
0.04
-
V/
o
C
-
-
1
-
-
-
-
18
28
3
-
R
DS(ON)
m
V
S
13
V
DS
=30V, V
GS
=0V
-
-
1
V
DS
=24V, V
GS
=0V
-
-
25
uA
V
GS
=±25V
I
D
=9A,
V
DS
=20V,
V
GS
=4.5V
V
DS
=15V,
I
D
=1A,
R
G
=3.3
, V
GS
=10V
R
D
=15
V
GS
=0V,
V
DS
=25V,
f=1.0MHz
f=1.0MHz
-
-
-
-
-
-
-
-
-
-
-
-
-
±100
18
-
-
-
-
-
-
1350
-
-
-
nA
11
3
7
10
6
23
7
840
190
140
1.4
nC
ns
pF
Test Conditions
I
S
=2.1A, V
GS
=0V
I
S
=9A, V
GS
=0V,
dl/dt=100A/μs
Min.
-
-
-
Typ.
-
18
8
Max.
1.2
-
-
Unit
V
ns
nC
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