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參數(shù)資料
| 型號： | AF6930NSLA |
| 廠商： | INTEGRATED CIRCUIT TECHNOLOGY CORP |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 30 V, 0.05 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SO-8 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 513K |
| 代理商： | AF6930NSLA |
AF6930N
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.2 Sep 5, 2005
2/5
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
TA=25C
5
ID
Continuous Drain Current (Note 1)
TA=70C
4
A
IDM
Pulsed Drain Current (Note 2)
20
A
Total Power Dissipation
2
W
PD
Linear Derating Factor
TA=25C
0.016
W/C
TSTG
Storage Temperature Range
-55 to 150
C
TJ
Operating Junction Temperature Range
-55 to 150
C
Thermal Data
Symbol
Parameter
Maximum
Units
Rthj-amb
Thermal Resistance Junction-ambient (Note 1)
Max.
62.5
C/W
Electrical Characteristics at T
J=25C unless otherwise specified
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
30
-
V
BVDSS / TJ
Breakdown Voltage Temperature
Coefficient
Reference to 25
oC,
ID=1mA
-
0.037
-
V/
oC
VGS=10V, ID=5A
-
50
RDS(ON)
Static Drain-Source
On-Resistance (Note 3)
VGS=4.5V, ID=3.9A
-
80
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=15V, ID=5A
-
6
-
S
Drain-Source Leakage Current
(TJ=25
oC)
VDS=30V, VGS=0V
-
1
IDSS
Drain-Source Leakage Current
(TJ=70
oC)
VDS=24V, VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge (Note 3)
-
6.1
-
Qgs
Gate-Source Charge
-
1.4
-
Qgd
Gate-Drain (“Miller”) Charge
ID=5A,
VDS=15V,
VGS=5V
-
3.3
-
nC
td(on)
Turn-On Delay Time (Note 3)
-
6.7
-
tr
Rise Time
-
6.4
-
td(off)
Turn-Off Delay Time
-
22.1
-
tf
Fall-Time
VDS=15V,
ID=1.5A,
RG=3.3, VGS=10V
RD=10
-
2.1
-
ns
Ciss
Input Capacitance
-
240
-
Coss
Output Capacitance
-
145
-
Crss
Reverse Transfer Capacitance
VGS=0V,
VDS=25V,
f=1.0MHz
-
55
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
(Body Diode)
VD=VG=0V, VS=1.2V
-
1.67
V
VSD
Forward On Voltage (Note 3)
TJ=25C, IS=1.7A,
VGS=0V
-
1.2
V
Note 1: Surface mounted on 1 in
2 copper pad of FR4 board; 135oC/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.
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