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參數(shù)資料
| 型號： | AF60N03D |
| 廠商： | INTEGRATED CIRCUIT TECHNOLOGY CORP |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT, TO-252, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 436K |
| 代理商： | AF60N03D |
AF60N03
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Sep 8, 2005
2/5
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
TC=25C
45
ID
Continuous Drain Current, VGS=10V
TC=100C
32
A
IDM
Pulsed Drain Current (Note 1)
120
A
Total Power Dissipation
TC=25C
44
W
PD
Linear Derating Factor
0.352
W/C
TSTG
Storage Temperature Range
-55 to 175
C
TJ
Operating Junction Temperature Range
-55 to 175
C
Thermal Data
Symbol
Parameter
Maximum
Units
RθJC
Thermal Resistance Junction-Case
Max.
3.4
C/W
RθJA
Thermal Resistance Junction- Ambient
Max.
110
C/W
Electrical Characteristics (T
J=25C unless otherwise noted)
Limits
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
V
BVDSS/TJ
Breakdown Voltage Temperature
Coefficient
Reference to 25C,
ID=1mA
-
0.026
-
V/C
VGS=10V, ID=20A
-
12
RDS(ON)
Static Drain-Source
On-Resistance (Note 2)
VGS=4.5V, ID=15A
-
25
m
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance (Note 2) VDS=10V, ID=10A
-
25
-
S
Drain-Source Leakage Current
(TJ=25C)
VDS=30V, VGS=0V
-
1
IDSS
Drain-Source Leakage Current
(TJ=175C)
VDS=24V, VGS=0V
-
250
uA
IGSS
Gate Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge (Note 2)
-
11.6
-
Qgs
Gate-Source Charge
-
3.9
-
Qgd
Gate-Drain (“Miller”) Charge
ID=20A
VDS=20V
VGS=4.5V
-
7
-
nC
td(on)
Turn-On Delay Time (Note 2)
-
8.8
-
tr
Rise Time
-
57.5
-
td(off)
Turn-Off Delay Time
-
18.5
-
tf
Fall-Time
VDS=15V
ID=20A
RG=3.3, VGS=10V
RD=0.75
-
6.4
-
nS
Ciss
Input Capacitance
-
1135
-
Coss
Output Capacitance
-
200
-
Crss
Reverse Transfer Capacitance
VGS=0V
VDS=25V,
f=1.0MHz
-
135
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VSD
Forward On Voltage (Note 2)
IS=45A, VGS=0V
-
1.3
V
trr
Reverse Recovery Time
-
23.3
-
ns
Qrr
Reverse Recovery Charge
IS=20A, VGS=0V,
dl/dt=100A/s
-
16
-
nC
Note 1: Pulse width limited by safe operating area.
Note 2: Pulse width < 300us, duty cycle < 2%.
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