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參數(shù)資料
| 型號(hào)： | AF4978ND |
| 英文描述： | N-Channel Enhancement Mode Power MOSFET |
| 中文描述： | N溝道增強(qiáng)模式功率MOSFET |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 425K |
| 代理商： | AF4978ND |
AF4978N
N-Channel Enhancement Mode Power MOSFET
Features
- Low Gate Charge
- Single Drive Requirement
- Surface Mount Package
- Pb Free Plating Product
Product Summary
BV
DSS
(V)
R
DS(ON)
(m
)
60
100
Pin Assignments
(Front View)
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Sep 6, 2005
1/5
I
D
(A)
11
3
2
1
S
D
G
General Description
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-252 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
Pin Descriptions
Pin Name
S
G
D
Description
Source
Gate
Drain
Ordering information
A X
4978N X X
PN
Package
Feature
F: MOSFET
D: TO-252
Packing
Blank : Tube or Bulk
A : Tape & Reel
Block Diagram
S
G
D
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