參數(shù)資料
型號： AF4835P
英文描述： P-Channel Enhancement Mode Power MOSFET
中文描述： 的P -溝道增強(qiáng)型功率MOSFET
文件頁數(shù)： 2/6頁
文件大?。?/td> 248K
代理商： AF4835P
AF4835P
P-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Anachip Corp.
www.anachip.com.tw Rev. 1.2 Nov 19, 2004
2/6
Parameter
Rating
-30
±20
-8
-6
-50
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
T
A
=25oC
I
D
Continuous Drain Current
(Note 1)
T
A
=70oC
Pulsed Drain Current
(Note 2)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
A
I
DM
A
W
P
D
T
A
=25oC
W/oC
oC
oC
T
STG
T
J
Thermal Data
Symbol
Rthj-amb
Electrical Characteristics
at T
J
=25oC unless otherwise specified
Symbol
Parameter
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=-250uA
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance
(Note 3)
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-Source Leakage Current
(T
J
=25
C)
I
DSS
Drain-Source Leakage Current
(T
J
=70
C)
I
GSS
Gate-Source Leakage
Q
g
Total Gate Charge
(Note 3)
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain (“Miller”) Charge
t
d(on)
Turn-On Delay Time
(Note 3)
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall-Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
Parameter
Continuous Source Current
(Body Diode)
Parameter
Maximum
50
Units
oC/W
Thermal Resistance Junction-ambient
(Note 1)
Max.
Test Conditions
Min.
-30
Typ.
-
Max.
-
Units
V
V/
o
C
BV
DSS
/
T
J
Reference to 25
o
C,
I
D
=-1mA
V
GS
=-10V, I
D
=-8A
V
GS
=-4.5V, I
D
=-5A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-15V, I
D
=-8A
-
-0.037
-
-
-
-1
-
-
-
-
20
35
-3
-
R
DS(ON)
m
V
S
20
V
DS
=-30V, V
GS
=0V
-
-
-1
V
DS
=-24V, V
GS
=0V
-
-
-25
uA
V
GS
=±20V
I
D
=-4.6A,
V
DS
=-15V,
V
GS
=-10V
V
DS
=-15V,
I
D
=-1A,
R
G
=6
, V
GS
=-10V
R
D
=15
V
GS
=0V,
V
DS
=-15V,
f=1.0MHz
-
-
-
-
-
-
-
-
-
-
-
-
±100
-
-
-
-
-
-
-
-
-
-
nA
36
5.5
3.5
12
8
75
40
1530
900
280
nC
ns
pF
Test Conditions
Min.
Typ.
Max.
Unit
I
S
V
D
=V
G
=0V, V
S
=-1.2V
T
J
=25
o
C, I
S
=-2.1A,
V
GS
=0V
-
-
-2.08
A
V
SD
Forward On Voltage
(Note 3)
-
-0.75
-1.2
V
Note 1:
Surface mounted on 1 in
2
copper pad of FR4 board; 125
o
C/W when mounted on Min. copper pad.
Note 2:
Pulse width limited by Max. junction temperature.
Note 3:
Pulse width
≤
300us, duty cycle
≤
2%.
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