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參數(shù)資料
| 型號： | AF4825PSLA |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 30-V (D-S) MOSFET |
| 中文描述： | P溝道30V的MOSFET |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 149K |
| 代理商： | AF4825PSLA |
AF4825P
P-Channel 30-V (D-S) MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Jul 16, 2004
2/3
Absolute Maximum Ratings
(T
A
=25oC unless otherwise noted)
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Rating
-30
±25
-11.5
-9.3
±50
-2.1
3.1
2.3
-55 to 150
Units
V
V
T
A
=25oC
I
D
Continuous Drain Current
(Note 1)
T
A
=70oC
Pulsed Drain Current
(Note 2)
Continuous Source Current (Diode Conduction)
(Note 1)
A
I
DM
I
S
A
A
T
A
=25oC
T
A
=70oC
P
D
Power Dissipation
(Note 1)
W
T
J
, T
STG
Operating Junction and Storage Temperature Range
oC
Thermal Resistance Ratings
Symbol
R
θ
JC
Maximum Junction-to-Case
(Note 1)
R
θ
JA
Maximum Junction-to-Ambient
(Note 1)
Note 1:
surface Mounted on 1”x 1” FR4 Board.
Note 2:
Pulse width limited by maximum junction temperature
Specifications
(T
A
=25oC unless otherwise noted)
Parameter
Maximum
25
50
Units
oC/W
oC/W
t
<
5 sec
t
<
5 sec
Limits
Typ.
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
Static
V
(BR)DSS
V
GS(th)
I
GSS
Drain-Source breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
GS
=0V, I
D
=-250uA
V
DS
= V
GS
, I
D
=-250uA
V
DS
=0V, V
GS
=±25V
V
DS
=-24V, V
GS
=0V
V
DS
=-24V, V
GS
=0V,
T
J
=55oC
V
DS
=-5V, V
GS
=-10V
V
GS
=-10V, I
D
=-11.5A
V
GS
=-4.5V, I
D
=-9.3A
V
GS
=-10V, I
D
=-13A,
T
J
=55oC
V
GS
=-15V, I
D
=-11.5A
I
S
=2.5A, V
GS
=0V
-30
-1
-
-
-
-
-3
V
V
nA
-1.6
-
-
±100
-1
I
DSS
Zero Gate Voltage Drain Current
-
-
-5
uA
I
D(on)
On-State Drain Current
(Note 3)
-50
-
-
-
-
A
10
15
13
19.0
r
DS(on)
Drain-Source On-Resistance
(Note 3)
-
11
13
m
g
fs
V
SD
Forward Tranconductance
(Note 3)
Diode Forward Voltage
Dynamic
(Note 4)
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Switching
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall-Time
Note 3:
Pulse test: PW
<
300us duty cycle
<
2%.
Note 4:
Guaranteed by design, not subject to production testing.
-
-
29
-0.8
-
S
V
-1.2
-
-
-
64
11
17
100
-
-
V
DS
=-15V, V
GS
=-10V,
I
D
=-11.5A
nC
-
-
-
-
15
13
100
54
25
20
152
81
V
DD
=-15, R
L
=6
,
ID=-1A, VGEN=-10V
nS
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