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參數(shù)資料
| 型號(hào)： | AF4811PSA |
| 廠商： | INTEGRATED CIRCUIT TECHNOLOGY CORP |
| 元件分類： | JFETs |
| 英文描述： | 7.3 A, 35 V, 0.0032 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 369K |
| 代理商： | AF4811PSA |
AF4811P
P-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.3 Aug 30, 2005
2/5
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-35
V
VGS
Gate-Source Voltage
±25
V
TA=25C
-7.3
ID
Continuous Drain Current (Note 1)
TA=70C
-5.8
A
IDM
Pulsed Drain Current (Note 2)
-40
A
Total Power Dissipation
2.5
W
PD
Linear Derating Factor
TA=25C
0.02
W/C
TSTG
Storage Temperature Range
-55 to 150
C
TJ
Operating Junction Temperature Range
-55 to 150
C
Thermal Data
Symbol
Parameter
Maximum
Units
Rthj-amb
Thermal Resistance Junction-ambient (Note 1)
Max.
50
C/W
Electrical Characteristics at T
J=25C unless otherwise specified
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA
-35
-
V
BVDSS / TJ
Breakdown Voltage Temperature
Coefficient
Reference to 25
oC,
ID=-1mA
-
-0.02
-
V/
oC
VGS=-10V, ID=-7A
-
32
RDS(ON)
Static Drain-Source
On-Resistance (Note 3)
VGS=-4.5V, ID=-4A
-
50
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-7A
-
11
-
S
Drain-Source Leakage Current
(TJ=25
oC)
VDS=-30V, VGS=0V
-
-1
IDSS
Drain-Source Leakage Current
(TJ=70
oC)
VDS=-24V, VGS=0V
-
-25
uA
IGSS
Gate-Source Leakage
VGS=±25V
-
±100
nA
Qg
Total Gate Charge (Note 3)
-
11
18
Qgs
Gate-Source Charge
-
2
-
Qgd
Gate-Drain (“Miller”) Charge
ID=-7A,
VDS=-24V,
VGS=-4.5V
-
6
-
nC
td(on)
Turn-On Delay Time (Note 3)
-
10
-
tr
Rise Time
-
5
-
td(off)
Turn-Off Delay Time
-
25
-
tf
Fall-Time
VDS=-15V,
ID=-1A,
RG=3.3, VGS=-10V
RD=15
-
8
-
ns
Ciss
Input Capacitance
-
980
1560
Coss
Output Capacitance
-
210
-
Crss
Reverse Transfer Capacitance
VGS=0V,
VDS=-25V,
f=1.0MHz
-
130
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VSD
Forward On Voltage (Note 3)
IS=-2A, VGS=0V
-
-1.2
V
trr
Reverse Recovery Time (Note 3)
-
20
-
ns
Qrr
Reverse Recovery Charge
IS=-7A, VGS=0V,
dl/dt=100A/s
-
16
-
nC
Note 1: Surface mounted on 1 in
2 copper pad of FR4 board; t ≤ 10sec; 125oC/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.
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