參數(shù)資料
型號： AF40P03D
英文描述： P-Channel Enhancement Mode Power MOSFET
中文描述： 的P -溝道增強型功率MOSFET
文件頁數(shù)： 2/5頁
文件大?。?/td> 430K
代理商： AF40P03D
AF40P03
P-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Aug 10, 2005
2/5
Parameter
Rating
-30
±20
-30
-18
-120
31.3
0.25
-55 to 150
-55 to 150
Units
V
V
T
C
=25oC
T
C
=100oC
I
D
Continuous Drain Current, V
GS
=10V
A
I
DM
Pulsed Drain Current
(Note 1)
Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
A
W
T
C
=25oC
P
D
W/oC
oC
oC
T
STG
T
J
Thermal Data
Symbol
R
θ
JC
R
θ
JA
Electrical Characteristics
(T
J
=25oC unless otherwise noted)
Parameter
Maximum
4.0
110
Units
oC/W
oC/W
Thermal Resistance Junction-Case
Thermal Resistance Junction- Ambient
Max.
Max.
Limits
Typ.
-
Symbol
Parameter
Test Conditions
Min.
-30
Max.
-
Unit
BV
DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance
(Note 2)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage
Current(T
J
=25oC)
Drain-Source Leakage
Current(T
J
=150oC)
Gate Source Leakage
Total Gate Charge
(Note 2)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time
(Note 2)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V, I
D
=-250uA
Reference to 25oC,
I
D
=-1mA
V
GS
=-10V, I
D
=-18A
V
GS
=-4.5V, I
D
=-14A
V
DS
= V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-18A
V
BV
DSS
/
T
J
-
-0.02
-
V/oC
-
-
-1
-
-
-
-
28
50
-
-
R
DS(ON)
m
V
GS(th)
g
fs
V
S
20
V
DS
=-30V, V
GS
=0V
-
-
-1
I
DSS
V
DS
=-24V, V
GS
=0V
-
-
-25
uA
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
GS
=±20V
I
D
=-18A
V
DS
=-24V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-18A
R
G
=3.3
, V
GS
=-10V
R
D
=0.8
V
GS
=0V
V
DS
=-25V,
f=1.0MHz
-
-
-
-
-
-
-
-
-
-
-
-
±100
22
-
-
-
-
-
-
1465
-
-
nA
14
3
9
12
56
30
57
915
280
195
nC
nS
pF
Source-Drain Diode
Symbol
V
SD
Forward On Voltage
(Note 2)
t
rr
Reverse Recovery Time
(Note 2)
Q
rr
Reverse Recovery Charge
Parameter
Test Conditions
I
S
=-18A, V
GS
=0V
I
S
=-18A, V
GS
=0V,
Dl/dt=-100A/μs
Min.
-
-
-
Typ.
-
30
21
Max.
-1.2
-
-
Unit
V
ns
nC
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