參數(shù)資料
型號(hào)： AF2301PWL
廠商： INTEGRATED CIRCUIT TECHNOLOGY CORP
元件分類(lèi)： JFETs
英文描述： 2.6 A, 20 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： LEAD FREE, SOT-23, 3 PIN
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 441K
代理商： AF2301PWL
AF2301P
P-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.3 Jul 12, 2005
2/5
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-20
V
VGS
Gate-Source Voltage
±12
V
TA=25C
-2.6
ID
Continuous Drain Current (Note 1)
TA=70C
-2.1
A
IDM
Pulsed Drain Current (Note 2, 3)
-10
A
Total Power Dissipation
TA=25C
1.38
W
PD
Linear Derating Factor
0.01
W/C
TSTG
Storage Temperature Range
-55 to +150
C
TJ
Operating Junction Temperature Range
-55 to +150
C
Thermal Data
Symbol
Parameter
Limit
Units
RθJA
Thermal Resistance Junction-Ambient (Note 1)
Max.
90
C/W
Electrical Characteristics (T
J=25
oC unless otherwise specified)
Limits
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-20
-
V
BVDSS/
TJ
Breakdown Voltage Temperature
Coefficient
Reference to 25C,
ID=-1mA
-
-0.1
-
V/C
VGS=-5V, ID=-2.8A
-
130
RDS(ON) Drain-Source On-State Resistance
(Note 3)
VGS=-2.8V, ID=-2.0A
-
190
m
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID=-250uA
-0.5
-
V
gfs
Forward Transconductance
VDS=-5V, ID=-2.8A
-
4.4
-
S
TJ=25C
VDS=-20V, VGS=0V
-
-1
IDSS
Drain-Source Leakage
Current
TJ=70C
VDS=-16V, VGS=0V
-
-10
uA
IGSS
Gate-Source Leakage
VGS=±12V
-
±100
nA
Qg
Total Gate Charge (Note 3)
-
5.2
10
Qgs
Gate-Source Charge
-
1.36
-
Qgd
Gate-Drain (“Miller”) Charge
VDS=-6V, ID=-2.8A,
VGS=-5V
-
0.6
-
nC
td(on)
Turn-On Delay Time (Note 3)
-
5.2
-
tr
Turn-On Rise Time
-
9.7
-
td(off)
Turn-Off Delay Time
-
19
-
tf
Turn-Off Fall-Time
VDS=-15V, RD=15,
ID=-1A, VGS=-10V,
RG=6
-
29
-
nS
Ciss
Input Capacitance
-
295
-
Coss
Output Capacitance
-
170
-
Crss
Reverse Transfer Capacitance
VDS=-6V, VGS=0V,
f=1.0MHz
-
65
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current (Body
Diode)
VD=VG=0V, VS=-1.2V
-
-1
A
ISM
Pulsed Source Current (Body Diode)
(Note 2)
-
-10
A
VSD
Forward On Voltage (Note 3)
TJ=25
oC, I
S=-1.6A,
VGS=0V
-
1.2
V
Note 1: Surface mounted on 1 in
2 copper pad of FR4 board; 270oC/W when mounted on min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width
≤ 300us, duty cycle ≤ 2%.
相關(guān)PDF資料
PDF描述
AF2301PWA 2.6 A, 20 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET
AF2301PWLA 2.6 A, 20 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET
AF2301PW 2.6 A, 20 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET
AF2302NW 3.2 A, 20 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
AF2302NWLA 3.2 A, 20 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AF2301PWLA 制造商:ANACHIP 制造商全稱:Anachip Corp 功能描述:20V P-Channel Enhancement Mode MOSFET
AF2302N 制造商:ANACHIP 制造商全稱:Anachip Corp 功能描述:20V N-Channel Enhancement Mode MOSFET
AF2302NW 制造商:ANACHIP 制造商全稱:Anachip Corp 功能描述:20V N-Channel Enhancement Mode MOSFET
AF2302NWA 制造商:ANACHIP 制造商全稱:Anachip Corp 功能描述:20V N-Channel Enhancement Mode MOSFET
AF2302NWL 制造商:ANACHIP 制造商全稱:Anachip Corp 功能描述:20V N-Channel Enhancement Mode MOSFET
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