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參數(shù)資料
| 型號： | ADS7825UE4 |
| 廠商： | Texas Instruments |
| 文件頁數(shù)： | 15/21頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC 16BIT 4-CHAN MUX ADC 28-SOIC |
| 產(chǎn)品培訓模塊： | Data Converter Basics |
| 標準包裝： | 20 |
| 位數(shù)： | 16 |
| 采樣率（每秒）： | 40k |
| 數(shù)據(jù)接口： | 串行，并聯(lián) |
| 轉換器數(shù)目： | 1 |
| 功率耗散（最大）： | 50mW |
| 電壓電源： | 單電源 |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 28-SOIC（0.295"，7.50mm 寬） |
| 供應商設備封裝： | 28-SOIC |
| 包裝： | 管件 |
| 輸入數(shù)目和類型： | 4 個單端，雙極 |
3
ADS7825
V
S1
V
S2
PWRD
CONTC
BUSY
CS
R/C
BYTE
PAR/SER
A0
A1
D0
D1
D2
AGND1
AIN
0
AIN
1
AIN
2
AIN
3
CAP
REF
AGND2
D7
D6
D5
D4
D3
DGND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
ADS7825
TRI-STATE
EXT/INT
SYNC
TAG
SDATA
DATACLK
DIGITAL TIMING
Bus Access Time
PAR/SER = +5V
83
T
ns
Bus Relinquish Time
PAR/SER = +5V
83
T
ns
Data Clock
PAR/SER = 0V
Internal Clock (Output only when
EXT/INT LOW
0.5
1.5
TT
MHz
transmitting data)
External Clock
EXT/INT HIGH
0.1
10
TT
MHz
POWER SUPPLIES
VS1 = VS2 = VS
+4.75
+5
+5.25
TT
T
V
Power Dissipation
fS = 40kHz
50
T
mW
PWRD HIGH
50
T
W
TEMPERATURE RANGE
Specified Performance
–40
+85
TT
°C
Storage
–65
+150
TT
°C
Thermal Resistance (
θ
JA)
Plastic DIP
75
T
°C/W
SOIC
75
T
°C/W
NOTES: (1) An asterik (T) specifies same value as grade to the left. (2) LSB means Least Significant Bit. For the 16-bit,
±10V input ADS7825, one LSB is 305V. (3)
Typical rms noise at worst case transitions and temperatures. (4) Full scale error is the worst case of –Full Scale or +Full Scale untrimmed deviation from ideal first and
last code transitions, divided by the transition voltage (not divided by the full-scale range) and includes the effect of offset error. (5) All specifications in dB are referred
to a full-scale
±10V input. (6) A full scale sinewave input on one channel will be attenuated by this amount on the other channels. (7) Useable Bandwidth defined as
Full-Scale input frequency at which Signal-to-(Noise+Distortion) degrades to 60dB, or 10 bits of accuracy. (8) The ADS7825 will accurately acquire any input step if given
a full acquisition period after the step. (9) Recovers to specified performance after 2 x FS input overvoltage, and normal acquisitions can begin.
SPECIFICATIONS (CONT)
ELECTRICAL
At T
A
= –40
°C to +85°C, f
S
= 40kHz, V
S1
= V
S2
= V
S
= +5V
±5%, using external reference, CONTC = 0V, unless otherwise specified.
ADS7825P, U
ADS7825PB, UB
PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degrada-
tion to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet its
published specifications.
PACKAGE
MINIMUM SIGNAL-
DRAWING
TEMPERATURE
MAXIMUM INTEGRAL
TO-(NOISE + DISTORTION)
PRODUCT
PACKAGE
NUMBER(1)
RANGE
LINEARITY ERROR (LSB)
RATIO (dB)
ADS7825P
Plastic Dip
246
–40
°C to +85°C
±383
ADS7825PB
Plastic Dip
246
–40
°C to +85°C
±286
ADS7825U
SOIC
217
–40
°C to +85°C
±383
ADS7825UB
SOIC
217
–40
°C to +85°C
±286
NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book.
PACKAGE/ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS
TOP VIEW
DIP/SOIC
PIN CONFIGURATION
Analog Inputs: AIN0, AIN1, AIN2, AIN3 .............................................. ±15V
REF ................................... (AGND2 –0.3V) to (VS + 0.3V)
CAP ........................................ Indefinite Short to AGND2,
Momentary Short to VS
VS1 and VS2 to AGND2 ........................................................................... 7V
VS1 to VS2 .......................................................................................... ±0.3V
Difference between AGND1, AGND2 and DGND .............................
±0.3V
Digital Inputs and Outputs .......................................... –0.3V to (VS + 0.3V)
Maximum Junction Temperature ..................................................... 150
°C
Internal Power Dissipation ............................................................. 825mW
Lead Temperature (soldering, 10s) ................................................ +300
°C
Maximum Input Current to Any Pin ................................................. 100mA
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