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| 型號： | ADP3630ARMZ-R7 |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | MOSFETs |
| 英文描述： | High Speed, Dual, 2 A MOSFET Driver, non-inverting A/B input pins; Package: 8 ld MSOP; No of Pins: 8; Temperature Range: Ind |
| 中文描述： | 2 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO8 |
| 封裝： | ROHS COMPLIANT, MO-187-AA, MSOP-8 |
| 文件頁數(shù)： | 5/16頁 |
| 文件大?。?/td> | 361K |
| 代理商： | ADP3630ARMZ-R7 |
ADP3629/ADP3630/ADP3631
Rev. 0 | Page 13 of 16
THERMAL CONSIDERATIONS
When designing a power MOSFET gate drive, the maximum
power dissipation in the driver must be considered to avoid
exceeding the maximum junction temperature.
Data on package thermal resistance is provided in Table 3 to
help the designer in this task.
Several equally important aspects must also be considered.
Gate charge of the power MOSFET being driven
Bias voltage value used to power the driver
Maximum switching frequency of operation
Value of external gate resistance
Maximum ambient (and PCB) temperature
Type of package
All of these factors influence and limit the maximum allowable
power dissipated in the driver.
The gate of a power MOSFET has a nonlinear capacitance
characteristic. For this reason, although the input capacitance
is usually reported in the MOSFET data sheet as CISS, it is not
useful to calculate power losses.
The total gate charge necessary to turn on a power MOSFET
device is usually reported on the device data sheet under QG.
This parameter varies from a few nanocoulombs (nC) to several
hundreds of nC and is specified at a specific VGS value (10 V
or 4.5 V).
The power necessary to charge and then discharge the gate of a
power MOSFET can be calculated as follows:
PGATE = VGS × QG × fSW
where:
VGS is the bias voltage powering the driver (VDD).
QG is the total gate charge.
fSW is the maximum switching frequency.
The power dissipated for each gate (PGATE) must be multiplied
by the number of drivers (in this case, 1 or 2) being used in each
package; this PGATE value represents the total power dissipated in
charging and discharging the gates of the power MOSFETs.
Not all of this power is dissipated in the gate driver because
part of it is actually dissipated in the external gate resistor, RG.
The larger the external gate resistor, the smaller the amount of
power that is dissipated in the gate driver.
In modern switching power applications, the value of the gate
resistor is kept at a minimum to increase switching speed and
to minimize switching losses.
In all practical applications where the external resistor is in the
order of a few ohms, the contribution of the external resistor
can be ignored, and the extra loss is assumed to be in the driver,
providing a good guard band for the power loss calculations.
In addition to the gate charge losses, there are also dc bias losses
(PDC) due to the bias current of the driver. This current is present
regardless of the switching frequency.
PDC = VDD × IDD
The total estimated loss is the sum of PDC and PGATE.
PLOSS = PDC + (n × PGATE)
where n is the number of gates driven.
When the total power loss is calculated, the temperature
increase can be calculated as follows:
ΔTJ = PLOSS × θJA
Design Example
For example, consider driving two IRFS4310Z MOSFETs with a
VDD of 12 V at a switching frequency of 100 kHz, using an
ADP3630 in the MSOP package.
The maximum PCB temperature considered for this design is 85°C.
From the MOSFET data sheet, the total gate charge is QG = 120 nC.
PGATE = 12 V × 120 nC × 100 kHz = 144 mW
PDC = 12 V × 1.2 mA = 14.4 mW
PLOSS = 14.4 mW + (2 × 144 mW) = 302.4 mW
The MSOP thermal resistance is 162.2°C/W (see Table 3).
ΔTJ = 302.4 mW × 162.2°C/W = 49.0°C
TJ = TA + ΔTJ = 134.0°C ≤ TJ_MAX
This estimated junction temperature does not factor in the
power dissipated in the external gate resistor and, therefore,
provides a certain guard band.
If a lower junction temperature is required by the design,
the SOIC_N package, which provides a thermal resistance
of 110.6°C/W, can be used. Using the SOIC_N package, the
maximum junction temperature is
ΔTJ = 302.4 mW × 110.6°C/W = 33.4°C
TJ = TA + ΔTJ = 118.4°C ≤ TJ_MAX
Other options to reduce power dissipation in the driver include
reducing the value of the VDD bias voltage, reducing the switching
frequency, and choosing a power MOSFET with a smaller gate
charge.
相關(guān)PDF資料 |
PDF描述 |
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| ADP3630ARZ-R7 | High Speed, Dual, 2 A MOSFET Driver, non-inverting A/B input pins; Package: 8 ld SOIC; No of Pins: 8; Temperature Range: Ind |
| ADP3631ARMZ-R7 | High Speed, Dual, 2 A MOSFET Driver, inverting A & non-inverting B input pins; Package: 8 ld MSOP; No of Pins: 8; Temperature Range: Ind |
| ADP3631ARZ-R7 | High Speed, Dual, 2 A MOSFET Driver, inverting A & non-inverting B input pins; Package: 8 ld SOIC; No of Pins: 8; Temperature Range: Ind |
| ADP3820ART-4.2-RL | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO6 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| ADP3630ARZ-R7 | 功能描述:IC MOSFET DVR 2A DL HS 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:95 系列:- 配置:半橋 輸入類型:PWM 延遲時間:25ns 電流 - 峰:1.6A 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動）:118V 電源電壓:9 V ~ 14 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1282 (CN2011-ZH PDF) 其它名稱:*LM5104M*LM5104M/NOPBLM5104M |
| ADP3630ARZ-R7 | 制造商:Analog Devices 功能描述:Dual Non-Inverting MOSFET Driver IC |
| ADP3631 | 制造商:AD 制造商全稱:Analog Devices 功能描述:High Speed, Dual, 2 A MOSFET Driver |
| ADP3631ARMZ-R7 | 功能描述:IC MOSFET DVR 2A DL HS 8MSOP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
| ADP3631ARZ-R7 | 功能描述:IC MOSFET DVR 2A DL HS 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:95 系列:- 配置:高端和低端，獨立 輸入類型:非反相 延遲時間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF) |
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