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參數(shù)資料
| 型號： | ADP3412 |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | Replaced by BQ29415 : Voltage Protection for 2, 3, or 4 Cell LiIon Batteries (2nd Lev Protection) 8-SM8 -25 to 85 |
| 中文描述： | 與自舉雙MOSFET驅(qū)動器 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 135K |
| 代理商： | ADP3412 |
ADP3412
–7–
REV. 0
where
f
MAX
is the maximum switching frequency of the control-
ler. The peak surge current rating should be checked in-circuit,
since this is dependent on the source impedance of the 5 V sup-
ply, and the ESR of C
BST
.
Delay Capacitor Selection
The delay capacitor, C
DLY
, is used to add an additional delay
when the low-side FET drive turns off and when the high-side
drive starts to turn on. The delay capacitor adds 1 ns/pF of
additional time to the 20 ns of fixed delay.
If a delay capacitor is required, look for a good quality ceramic
capacitor with an NPO or COG dielectric, or for a good quality
mica capacitor. Both types of capacitors are available in the 1 pF
to 100 pF range and have excellent temperature and leakage
characteristics.
1
2
3
4
8
7
6
5
BST
IN
DLY
VCC
DRVH
SW
PGND
DRVL
U2
ADP3412
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
VID4
VID3
VID2
VID1
VCC
REF
CS
–
PWM1
VID0
COMP
FB
CT
PWM2
CS+
PWRGND
GND
U1
ADP3160
U3
ADP3412
1
2
3
4
8
7
6
5
BST
IN
DLY
VCC
DRVH
SW
PGND
DRVL
C15
C14
C13
C12
V
IN
12V
V
IN
RTN
270 F 4
OS-CON 16V
R
A
60.4k
R
B
10k
C
1.4nF
R
Z
1.1k
C11 C16 C17 C18 C19 C20 C21 C22
1200 F 8
OS-CON 2.5V
11m ESR (EACH)
V
1.1V
–
1.85V
53.4A
V
CC(CORE)
Q3
FDB7030L
D1
MBR052LTI
Q5
2N3904
L2
600nH
L1
600nH
Q1
FDB7030L
Q2
FDB8030L
C10
1 F
D2
MBR052LTI
C7
15pF
C5
1 F
Z1
ZMM5236BCT
R5
2.4k
R8
330
C23
330pF
C22
1nF
C4
4.7 F
R6
10
C21
15nF
C26
4.7 F
C8
15pF
C6
1 F
C9
1 F
R7
20
R4
4m
C2
100pF
C1
150pF
R1
1k
Q4
FDB8030L
+
+
+
+
+
+
+
+
FROM
CPU
Figure 3. 53.4 A Intel CPU Supply Circuit
Printed Circuit Board Layout Considerations
Use the following general guidelines when designing printed
circuit boards:
1.
Trace out the high-current paths and use short, wide traces
to make these connections.
2.
Connect the PGND pin of the ADP3412 as close as pos-
sible to the source of the lower MOSFET.
3.
The VCC bypass capacitor should be located as close as
possible to VCC and PGND pins.
Typical Application Circuits
The circuit in Figure 3 shows how two drivers can be com-
bined with the ADP3160 to form a total power conversion
solution for V
CC(CORE)
generation in a high-current GOA com-
puter. Figure 4 gives CPU a similar application circuit for a
35 A processor.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ADP3412JR | Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.35V) 8-SM8 -40 to 110 |
| ADP3413 | Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.35V) 8-SM8 -40 to 110 |
| ADP3413JR | Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.35V) 8-SM8 -40 to 110 |
| ADP3414 | Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.35V) 8-SM8 -40 to 110 |
| ADP3414JR | Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.35V) 8-SM8 -40 to 110 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ADP3412JR | 功能描述:IC MOSFET DVR DUAL N-CH 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| ADP3412JR-REEL | 制造商:Rochester Electronics LLC 功能描述:HIGH CURRENT DUAL MOSFET DRIVER - Tape and Reel |
| ADP3412JR-REEL7 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| ADP3412JRZ-REEL | 制造商:Analog Devices 功能描述: |
| ADP3413 | 制造商:AD 制造商全稱:Analog Devices 功能描述:Dual Bootstrapped MOSFET Driver with Output Disable |
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