參數(shù)資料
型號(hào): ADL5531ACPZ-WP
廠商: ANALOG DEVICES INC
元件分類: 放大器
英文描述: 20 MHz - 500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
封裝: 3 X 3 MM, LEAD FREE, LFCSP, 8 PIN
文件頁(yè)數(shù): 1/9頁(yè)
文件大小: 235K
代理商: ADL5531ACPZ-WP
20 MHz to 500 MHz
IF Gain Blocks
Preliminary Technical Data
ADL5531
Rev. PrD 5/07
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibilityis assumedbyAnalogDevicesforitsuse,norforanyinfringements of patents or other
rightsofthirdpartiesthatmayresultfromitsuse.Specificationssubjecttochangewithoutnotice.No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
2007 Analog Devices, Inc. All rights reserved.
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Fixed gain of 20 dB
Operation up to 500 MHz
+41.6 dBm OIP3 at 70 MHz
ADL5531
5CLIN
8NC
NC 4
6NC
20 dB
RFIN 2
7RFOUT
NC 3
NC 1
Noise Figure 2.5 dB at 70 MHz
Input/output internally matched to 50 Ω
Temperature and power supply stable
Power supply: 5 V
Power supply current: 101 mA
1000 V ESD (Class 1C)
Figure 1. Block Diagram
GENERAL DESCRIPTION
The ADL5531 is a broadband, fixed-gain, linear amplifier that
operate at frequencies up to 500 MHz. The device can be used
in a wide variety of wired and wireless devices including
cellular, GSM and WCDMA, and broadband applications.
This amplifier is single-ended and internally matched to 50 Ω
with an input return loss of 10 dB. Only input/output ac-
coupling capacitors, a power supply decoupling capacitor and
external inductor are required for operation.
Gain is stable over frequency, temperature, power supply and
from device to device. The ADL5531 achieves an OIP3 of 41.6
dBm with an output compression point of +20.7 dBm and a
noise figure of 2.5 dB.
The amplifier operates with a 5 V supply consuming 101 mA of
current.
The ADL5531 is fabricated on a GaAs HBT process and has an
ESD rating of 1000 V (Class 1C).The device is packaged in a 3mm
x 3mm LFCSP that uses an exposed paddle for excellent
thermal impedance and operates from 40°C to +85°C. A fully
populated evaluation board is available.
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