參數(shù)資料
型號(hào): ADL5530ACPZ-WP
廠商: ANALOG DEVICES INC
元件分類: 衰減器
英文描述: DC to 1000 MHz IF Gain Block
中文描述: 0 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: 3X2 MM, LEAD FREE, LFCSP, 8 PIN
文件頁數(shù): 10/12頁
文件大小: 215K
代理商: ADL5530ACPZ-WP
ADL5530
THEORY OF OPERATION
The basic connections for operating the ADL5530 are shown in
Figure 21. Recommended components are listed in Table 5. The
inputs and outputs should be ac coupled with appropriately
sized capacitors (device characterization was performed with
10 nF capacitors). DC bias is provided to the amplifier via an
inductor connected to the RF output pin. The bias voltage
should be decoupled using a 10 nF capacitor.
Rev. 0 | Page 10 of 12
SOLDERING INFORMATION AND RECOMMENDED
PCB LAND PATTERN
Figure 23 shows the recommended land pattern for ADL5530.
To minimize thermal impedance, the exposed paddle on the
package underside should be soldered down to a ground plane
along with Pin 8. If multiple ground layers exist, they should be
stitched together using vias. Pin 1, Pin 3, Pin 4, Pin 5 and Pin 6
can be left unconnected, or can be connected to ground.
Connecting these pins to ground slightly enhances thermal
impedance.
A bias voltage of 5 V is recommended. However, the device is
specified to operate down to 3 V with a slightly reduced
compression point and a reduced noise figure.
0
PIN 1
0.33 mm
0.33mm
8
5
4
0.46mm
0.5mm
0.33mm
0.53mm
2.13mm
RFIN
3V TO 5V
1
2
3
4
8
7
6
5
C1
10nF
C2
10nF
RF OUT
C5
10nF
L1
470nH
NC = NO CONNECT
Figure 21. Basic Connections
0
ADL5530
NC
NC
IN1
NC
GND
OUT1
NC
NC
For operation down to 10 MHz, a larger biasing choke is
recommended (see
Table 5) along with larger ac-coupling
capacitors.
Figure 22 shows a plot of input return loss and gain
with the recommended components.
Figure 23. Recommended Land Pattern
Table 5. Recommended Components for Basic Connections
Frequency
C1
10 MHz to 50 MHz
0.1 μF
50 MHz to 1000 MHz
10 nF
C2
0.1 μF
10 nF
L1
3.3 μH
470 nH
C5
0.1 μF
10 nF
20
–20
5
5
0
FREQUENCY (MHz)
G
0
15
10
5
0
–5
–10
–15
10
15
20
25
30
35
40
45
S11 (3.3μH)
S11 (470nH)
S21 (470nH)
S21 (3.3μH)
Figure 22. Performance at 10 MHz
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