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ADG821/ADG822/ADG823
Rev. A | Page 3 of 12
SPECIFICATIONS
VDD = 5 V ± 10%, GND = 0 V; TA = 40°C to +125°C, unless otherwise noted.
Table 1.
Parameter
25°C
40°C to
+85°C
40°C to
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to VDD
V
On Resistance (RON)
0.5
Ω typ
0.6
0.7
0.8
Ω max
On Resistance Match Between
0.16
Ω typ
VS = 0 V to VDD, IS = 100 mA
Channels (ΔRON)
0.2
0.25
0.28
Ω max
On Resistance Flatness (RFLAT(ON))
0.15
Ω typ
VS = 0 V to VDD, IS = 100 mA
0.23
0.26
0.3
Ω max
LEAKAGE CURRENTS
VDD = 5.5 V
Source Off Leakage, IS (Off )
±0.01
nA typ
VS = 4.5 V/1 V, VD = 1 V/4.5 V, see Figure 18 ±0.25
±3
±25
nA max
Drain Off Leakage, ID (Off )
±0.01
nA typ
VS = 4.5 V/1 V, VD = 1 V/4.5 V, see Figure 18 ±0.25
±3
±25
nA max
Channel On Leakage, ID, IS (On)
±0.01
nA typ
VS = VD = 1 V, or VS = VD = 4.5 V, see Figure 19 ±0.25
±3
±25
nA max
DIGITAL INPUTS
Input High Voltage, VINH
2.0
V min
Input Low Voltage, VINL
0.8
V max
Input Current
IINL or IINH
0.005
μA typ
VIN = VINL or VINH
±0.1
μA max
Digital Input Capacitance, CIN
4
pF typ
tON
33
ns typ
RL = 50 Ω, CL = 35 pF, VS = 3 V, see Figure 20 45
48
52
ns max
tOFF
11
ns typ
RL = 50 Ω, CL = 35 pF, VS = 3 V, see Figure 20 16
19
21
ns max
Break-Before-Make Time Delay, tBBM
32
ns typ
RL = 50 Ω, CL = 35 pF, VS1 = VS2 = 3 V,
(ADG823 Only)
1
ns min
Charge Injection
15
pC typ
VS = 2.5 V; RS = 0 Ω, CL = 1 nF, see Figure 22 Off Isolation
52
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 23 Channel-to-Channel Crosstalk
82
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 24 Bandwidth 3 dB
24
MHz typ
CS (Off )
85
pF typ
f = 1 MHz
CD (Off )
98
pF typ
f = 1 MHz
CD, CS (On)
230
pF typ
f = 1 MHz
POWER REQUIREMENTS
VDD = 5.5 V, digital inputs = 0 V or 5.5 V
IDD
0.001
μA typ
1.0
2.0
μA max
1 On resistance parameters tested with IS = 10 mA.
2 Guaranteed by design, not subject to production test.