參數(shù)資料
型號(hào): ADG636YRUZ
廠商: Analog Devices Inc
文件頁數(shù): 1/16頁
文件大?。?/td> 0K
描述: IC SWITCH DUAL SPDT 14TSSOP
產(chǎn)品培訓(xùn)模塊: iCMOS™ Switches and Multiplexers for Data Acquisition
Switch Fundamentals
標(biāo)準(zhǔn)包裝: 96
功能: 開關(guān)
電路: 2 x SPDT - NC/NO
導(dǎo)通狀態(tài)電阻: 290 歐姆
電壓電源: 單/雙電源
電壓 - 電源,單路/雙路(±): 2.7 V ~ 5.5 V,±2.7 V ~ 5.5 V
電流 - 電源: 1nA
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 14-TSSOP(0.173",4.40mm 寬)
供應(yīng)商設(shè)備封裝: 14-TSSOP
包裝: 管件
產(chǎn)品目錄頁面: 803 (CN2011-ZH PDF)
1 pC Charge Injection, 100 pA Leakage,
CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch
ADG636
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibilityis assumedbyAnalogDevicesforitsuse,norforanyinfringementsof patentsorother
rightsofthirdpartiesthatmayresultfromitsuse.Specificationssubjecttochangewithoutnotice.No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
2002–2009 Analog Devices, Inc. All rights reserved.
FEATURES
1 pC charge injection
±2.7 V to ±5.5 V dual supply
+2.7 V to +5.5 V single supply
Automotive temperature range: 40°C to +125°C
100 pA (maximum at 25°C) leakage currents
85 Ω typical on resistance
Rail-to-rail operation
Fast switching times
Typical power consumption (<0.1 μW)
TTL-/CMOS-compatible inputs
14-lead TSSOP package
APPLICATIONS
Automatic test equipment
Data acquisition systems
Battery-powered instruments
Communication systems
Sample-and-hold systems
Remote-powered equipment
Audio and video signal routing
Relay replacement
Avionics
FUNCTIONAL BLOCK DIAGRAM
ADG636
S1A
D1
6
D2
9
S2B
S2A
S1B
A1
14
A0
1
EN
2
4
5
11
10
LOGIC
02
75
4-
0
01
Figure 1.
GENERAL DESCRIPTION
The ADG636 is a monolithic device, comprising two indepen-
dently selectable CMOS single pole, double throw (SPDT)
switches. When on, each switch conducts equally well in both
directions.
The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or
from a single supply of +2.7 V to +5.5 V.
This switch offers ultralow charge injection of ±1.5 pC over the
entire signal range and leakage current of 10 pA typical at 25°C.
In addition, it offers on resistance of 85 Ω typical, which is matched
to within 2 Ω between channels. The ADG636 also has low power
dissipation yet is capable of high switching speeds.
The ADG636 exhibits break-before-make switching action and
is available in a 14-lead TSSOP package.
PRODUCT HIGHLIGHTS
1.
Ultralow charge injection. QINJ: ±1.5 pC typical over the
full signal range.
2.
Leakage current <0.25 nA maximum at 85°C.
3.
Dual ±2.7 V to ±5 V or single +2.7 V to +5.5 V supply.
4.
Automotive temperature range: 40°C to +125°C.
5.
Small 14-lead TSSOP package.
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ADG636YRUZ 制造商:Analog Devices 功能描述:IC DUAL SPDT SWITCH
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