(TA = +25 °C unless o" />
參數(shù)資料
型號(hào): ADG512BRZ-REEL7
廠商: Analog Devices Inc
文件頁(yè)數(shù): 8/12頁(yè)
文件大?。?/td> 0K
描述: IC SWITCH QUAD SPST 16SOIC
產(chǎn)品培訓(xùn)模塊: Switch Fundamentals
標(biāo)準(zhǔn)包裝: 1,000
系列: LC²MOS
功能: 開關(guān)
電路: 4 x SPST - NO
導(dǎo)通狀態(tài)電阻: 45 歐姆
電壓電源: 單/雙電源
電壓 - 電源,單路/雙路(±): 3V,5V,±5V
電流 - 電源: 100pA
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 16-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 16-SOIC
包裝: 帶卷 (TR)
ADG511/ADG512/ADG513
REV. C
–5–
ABSOLUTE MAXIMUM RATINGS
1
(TA = +25
°C unless otherwise noted)
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +25 V
VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –25 V
Analog, Digital Inputs
2
. . . . . . . . . . VSS – 2 V to VDD + 2 V or
30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . . –40
°C to +85°C
Extended (T Version) . . . . . . . . . . . . . . . . –55
°C to +125°C
Storage Temperature Range . . . . . . . . . . . . . –65
°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150
°C
Cerdip Package, Power Dissipation . . . . . . . . . . . . . . . 900 mW
θ
JA Thermal Impedance
. . . . . . . . . . . . . . . . . . . . . . 76
°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . 300
°C
Plastic Package, Power Dissipation . . . . . . . . . . . . . . . 470 mW
θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 117°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . 260
°C
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . . 600 mW
θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 77°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . 215
°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . 220
°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG511/ADG512/ADG513 features proprietary ESD protection circuitry,
permanent damage may occur on devices subjected to high-energy electrostatic discharges.
Therefore, proper ESD precautions are recommended to avoid performance degradation or loss
of functionality.
ORDERING GUIDE
Model
1
Temperature Range
2
Package Option
3
ADG511BN
–40
°C to +85°C
N-16
ADG511BR
–40
°C to +85°C
R-16A
ADG511ABR4
–40
°C to +85°C
R-16A
ADG511TQ
4
–55
°C to +125°C
Q-16
ADG512BN
–40
°C to +85°C
N-16
ADG512BR
–40
°C to +85°C
R-16A
ADG512ABR4
–40
°C to +85°C
R-16A
ADG513BN
–40
°C to +85°C
N-16
ADG513BR
–40
°C to +85°C
R-16A
ADG513ABR
4
–40
°C to +85°C
R-16A
NOTES
1For availability of MIL-STD-883, Class B processed parts, contact factory.
23.3 V specifications apply over 0
°C to 70°C temperature range.
3N = Plastic DIP; R = 0.15" Small Outline IC (SOIC); Q = Cerdip.
4Trench isolated latch-up proof parts. See Trench Isolation section.
WARNING!
ESD SENSITIVE DEVICE
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