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參數(shù)資料
| 型號： | ADG444BRZ-REEL |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 4/16頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC SWITCH QUAD SPST 16SOIC |
| 產(chǎn)品培訓(xùn)模塊： | Switch Fundamentals |
| 標(biāo)準(zhǔn)包裝： | 2,500 |
| 系列： | LC²MOS |
| 功能： | 開關(guān) |
| 電路： | 4 x SPST - NC |
| 導(dǎo)通狀態(tài)電阻： | 110 歐姆 |
| 電壓電源： | 單/雙電源 |
| 電壓 - 電源，單路/雙路(±)： | 12V，±15V |
| 電流 - 電源： | 1nA |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 16-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 16-SOIC |
| 包裝： | 帶卷 (TR) |
ADG441/ADG442/ADG444
Rev. A | Page 12 of 16
TRENCH ISOLATION
In the ADG441A, ADG442A, and ADG444A, an insulating
oxide layer (trench) is placed between the NMOS and the
PMOS transistors of each CMOS switch. Parasitic junctions,
which occur between the transistors in junction isolated
switches, are eliminated, and the result is a completely latch-up
proof switch.
In junction isolation, the N and P wells of the PMOS and
NMOS transistors form a diode that is reverse-biased under
normal operation. However, during overvoltage conditions, this
diode becomes forward-biased. A silicon-controlled rectifier
(SCR) type circuit is formed by the two transistors causing a
significant amplification of the current which, in turn, leads to
latch-up. With trench isolation, this diode is removed, and the
result is a latch-up proof switch.
05233-
004
BURIED OXIDE LAYER
SUBSTRATE (BACK GATE)
TRENCH
P-WELL
N-WELL
LOCO
NMOS
PMOS
Figure 21. Trench Isolation
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|---|---|
| ADG444BRZ-REEL1 | 制造商:AD 制造商全稱:Analog Devices 功能描述:LC2MOS Quad SPST Switches ADG441/ADG442/ADG444 |
| ADG445BQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Interface IC |
| ADG445TQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Interface IC |
| ADG451 | 制造商:AD 制造商全稱:Analog Devices 功能描述:LC2MOS 5 ohm RON SPST Switches |
| ADG451_06 | 制造商:AD 制造商全稱:Analog Devices 功能描述:LC2MOS 5 ?? RON SPST Switches |
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