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參數(shù)資料
| 型號(hào)： | ADG444BN |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 運(yùn)動(dòng)控制電子 |
| 英文描述： | LC2MOS Quad SPST Switches |
| 中文描述： | QUAD 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDIP16 |
| 封裝： | PLASTIC, MO-095AC, DIP-16 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 323K |
| 代理商： | ADG444BN |
ADG441/ADG442/ADG444
REV. 0
–5–
TRENCH ISOLATION
In the ADG441, ADG442 and ADG444, an insulating oxide
layer (trench) is placed between the NMOS and the PMOS
transistors of each CMOS switch. Parasitic junctions, which oc-
cur between the transistors in junction isolated switches, are
eliminated, the result being a completely latch-up proof switch.
In junction isolation, the N and P wells of the PMOS and
NMOS transistors form a diode that is reverse-biased under
normal operation. However, during overvoltage conditions, this
diode becomes forward biased. A silicon-controlled rectifier
(SCR) type circuit is formed by the two transistors causing a sig-
nificant amplification of the current which, in turn, leads to
latch up. With trench isolation, this diode is removed, the result
being a latch-up proof switch.
Trench isolation also leads to lower leakage currents. The
ADG441, ADG442 and ADG444 have a leakage current
of 0.5 nA as compared with a leakage current of several
nanoamperes in non-trench isolated switches. Leakage current is
an important parameter in sample-and-hold circuits, this current
being responsible for the discharge of the holding capacitor with
time causing droop. The ADG441/ADG442/ADG444’s low
leakage current, along with its fast switching speeds, make it
suitable for fast and accurate sample-and-hold circuits.
Typical Performance Characteristics
NMOS
PMOS
P-WELL
N-WELL
BURIED OXIDE LAYER
SUBSTRATE (BACK GATE)
TRENCH
LOCOS
Figure 1. Trench Isolation
170
10
15
90
50
3
0
130
9
R
O
V
D
(V
S)
– Volts
6
12
T
A
= +25
°
C
150
110
70
30
V
DD
= +5V
V
SS
= 0V
V
DD
= +10V
V
SS
= 0V
V
DD
= +12V
V
SS
= 0V
V
DD
= +15V
V
SS
= 0V
100
20
15
60
40
–10
–15
80
10
0
R
O
V
D
(V
S)
– Volts
–5
5
T
A
= +25
°
C
V
DD
= +5V
V
SS
= –5V
V
DD
= +12V
V
SS
= –12V
V
DD
= +15V
V
SS
= –15V
V
DD
= +10V
V
SS
= –10V
Figure 3. R
ON
as a Function of V
D
(V
S
): Single Supply
Figure 2. R
ON
as a Function of V
D
(V
S
): Dual Supply
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ADG444BR | LC2MOS Quad SPST Switches |
| ADG441 | Quad SPST Switches(LC2MOS精密的四單刀單擲開關(guān)) |
| ADG451 | LC2MOS 5 ohm RON SPST Switches |
| ADG451BN | LC2MOS 5 ohm RON SPST Switches |
| ADG451BR | LC2MOS 5 ohm RON SPST Switches |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ADG444BNZ | 功能描述:IC SWITCH QUAD SPST 16DIP RoHS:是 類別:集成電路 (IC) >> 接口 - 模擬開關(guān)，多路復(fù)用器，多路分解器 系列:LC²MOS 特色產(chǎn)品:MicroPak? 標(biāo)準(zhǔn)包裝:1 系列:- 功能:開關(guān) 電路:2 x SPST - NC 導(dǎo)通狀態(tài)電阻:500 毫歐 電壓電源:單電源 電壓 - 電源，單路/雙路(±):1.4 V ~ 4.3 V 電流 - 電源:150nA 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-XFDFN 供應(yīng)商設(shè)備封裝:8-XSON，SOT833-1 （1.95x1） 包裝:Digi-Reel® 其它名稱:568-5557-6 |
| ADG444BR | 功能描述:IC SWITCH QUAD SPST 16SOIC RoHS:否 類別:集成電路 (IC) >> 接口 - 模擬開關(guān)，多路復(fù)用器，多路分解器 系列:LC²MOS 標(biāo)準(zhǔn)包裝:1,000 系列:- 功能:多路復(fù)用器 電路:1 x 4:1 導(dǎo)通狀態(tài)電阻:- 電壓電源:雙電源 電壓 - 電源，單路/雙路(±):±5V 電流 - 電源:7mA 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:16-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC 包裝:帶卷 (TR) |
| ADG444BR-REEL | 制造商:Analog Devices 功能描述:Analog Switch Quad SPST 16-Pin SOIC N T/R 制造商:Analog Devices 功能描述:ANLG SW QUAD SPST 22V/25V 16SOIC N - Tape and Reel |
| ADG444BRZ | 功能描述:IC SWITCH QUAD SPST 16SOIC RoHS:是 類別:集成電路 (IC) >> 接口 - 模擬開關(guān)，多路復(fù)用器，多路分解器 系列:LC²MOS 應(yīng)用說明:Ultrasound Imaging Systems Application Note 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:250 系列:- 功能:開關(guān) 電路:單刀單擲 導(dǎo)通狀態(tài)電阻:48 歐姆 電壓電源:單電源 電壓 - 電源，單路/雙路(±):2.7 V ~ 5.5 V 電流 - 電源:5µA 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:48-LQFP 供應(yīng)商設(shè)備封裝:48-LQFP（7x7） 包裝:托盤 |
| ADG444BRZ | 制造商:Analog Devices 功能描述:IC QUAD SPST SWITCH |
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