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參數資料
| 型號： | ADG433BR |
| 廠商： | Analog Devices Inc |
| 文件頁數： | 4/8頁 |
| 文件大小： | 0K |
| 描述： | IC SWITCH QUAD SPST 16SOIC |
| 產品培訓模塊： | Switch Fundamentals |
| 標準包裝： | 48 |
| 系列： | LC²MOS |
| 功能： | 開關 |
| 電路： | 4 x SPST - NC/NO |
| 導通狀態(tài)電阻： | 42 歐姆 |
| 電壓電源： | 單/雙電源 |
| 電壓 - 電源，單路/雙路(±)： | 12V，±15V |
| 電流 - 電源： | 100pA |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 16-SOIC（0.154"，3.90mm 寬） |
| 供應商設備封裝： | 16-SOIC |
| 包裝： | 管件 |
ADG431/ADG432/ADG433
REV. C
–4–
ABSOLUTE MAXIMUM RATINGS
(TA = 25
°C unless otherwise noted.)
VDD to VSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +25 V
VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –25 V
VL to GND . . . . . . . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V
Analog, Digital Inputs
2
. . . . . . . . . . VSS – 2 V to VDD + 2 V or
30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . –40
°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65
°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150
°C
Plastic Package, Power Dissipation . . . . . . . . . . . . . . 470 mW
θJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 117°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . 260
°C
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . 600 mW
θJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 77°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . 215
°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . 220
°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG431/ADG432/ADG433 features proprietary ESD protection circuitry, perma-
nent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
PIN CONFIGURATION
(DIP/SOIC)
TOP VIEW
(Not to Scale)
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
IN1
D1
S1
VSS
GND
S4
D4
IN4
IN2
D2
S2
VDD
VL
S3
D3
IN3
ADG431
ADG432
ADG433
ORDERING GUIDE
Model
Temperature Range
Package Option
1
ADG431BN
–40
°C to +85°C
N-16
ADG431BR
–40
°C to +85°C
R-16A
ADG431ABR
–40
°C to +85°C
R-16A
2
ADG432BN
–40
°C to +85°C
N-16
ADG432BR
–40
°C to +85°C
R-16A
ADG432ABR
–40
°C to +85°C
R-16A
2
ADG433BN
–40
°C to +85°C
N-16
ADG433BR
–40
°C to +85°C
R-16A
ADG433ABR
–40
°C to +85°C
R-16A
2
NOTES
1N = Plastic DIP; R = 0.15" Small Outline IC (SOIC).
2Trench isolated, latch-up proof parts. See Trench Isolation section.
TERMINOLOGY
VDD
Most positive power supply potential.
VSS
Most negative power supply potential in dual
supplies. In single supply applications, it may be
connected to GND.
VL
Logic power supply (5 V).
GND
Ground (0 V) reference.
S
Source terminal. May be an input or output.
D
Drain terminal. May be an input or output.
IN
Logic control input.
RON
Ohmic resistance between D and S.
RON vs. VD (VS) The variation in RON due to a change in the ana-
log input voltage with a constant load current.
RON Drift
Change in RON vs. temperature.
RON Match
Difference between the RON of any two switches.
IS (OFF)
Source leakage current with the switch “OFF.”
ID (OFF)
Drain leakage current with the switch “OFF.”
ID, IS (ON)
Channel leakage current with the switch “ON.”
VD (VS)
Analog voltage on terminals D, S.
CS (OFF)
“OFF” switch source capacitance.
CD (OFF)
“OFF” switch drain capacitance.
CD, CS (ON)
“ON” switch capacitance.
CIN
Input Capacitance to ground of a digital input.
tON
Delay between applying the digital control input
and the output switching on.
tOFF
Delay between applying the digital control input
and the output switching off.
tD
“OFF” time or “ON” time measured between the
90% points of both switches, when switching
from one address state to another.
Crosstalk
A measure of unwanted signal which is coupled
through from one channel to another as a result
of parasitic capacitance.
Off Isolation
A measure of unwanted signal coupling through an
“OFF” switch.
Charge
A measure of the glitch impulse transferred from the
Injection
digital input to the analog output during switching.
WARNING!
ESD SENSITIVE DEVICE
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