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參數(shù)資料
型號: ADF4360-3BCPZ
廠商: Analog Devices Inc
文件頁數(shù): 21/24頁
文件大?。?/td> 0K
描述: IC SYNTHESIZER VCO 24-LFCSP
標(biāo)準(zhǔn)包裝: 1
類型: 扇出配送,整數(shù)-N,合成器(RF)
PLL:
輸入: CMOS,TTL
輸出: 時(shí)鐘
電路數(shù): 1
比率 - 輸入:輸出: 1:2
差分 - 輸入:輸出: 無/無
頻率 - 最大: 1.95GHz
除法器/乘法器: 是/無
電源電壓: 3 V ~ 3.6 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 24-VFQFN 裸露焊盤,CSP
供應(yīng)商設(shè)備封裝: 24-LFCSP-VQ(4x4)
包裝: 托盤
產(chǎn)品目錄頁面: 551 (CN2011-ZH PDF)
ADF4360-3
Data Sheet
Rev. D | Page 6 of 24
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
Rating
AVDD to GND1
0.3 V to +3.9 V
AVDD to DVDD
0.3 V to +0.3 V
VVCO to GND
0.3 V to +3.9 V
VVCO to AVDD
0.3 V to +0.3 V
Digital I/O Voltage to GND
0.3 V to VDD + 0.3 V
Analog I/O Voltage to GND
0.3 V to VDD + 0.3 V
REFIN to GND
0.3 V to VDD + 0.3 V
Operating Temperature Range
Maximum Junction Temperature
150°C
CSP θJA Thermal Impedance
(Paddle Soldered)
50°C/W
(Paddle Not Soldered)
88°C/W
Lead Temperature, Soldering Reflow
260°C
1
GND = AGND = DGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maxi-
mum rating conditions for extended periods may affect device
reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <1 kV and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
12543 (CMOS) and 700 (Bipolar).
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features proprie-
tary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic
discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of
functionality.
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