Data Sheet
ADF4360-2
Rev. C | Page 3 of 24
AVDD = DVDD = VVCO = 3.3 V ± 10%; AGND = DGND = 0 V; TA = TMIN to TMAX, unless otherwise noted.
Table 1.
Parameter
B Version
Unit
Conditions/Comments
REFIN CHARACTERISTICS
REFIN Input Frequency
10/250
MHz min/max
For f < 10 MHz, use a CMOS-compatible
square wave, slew rate > 21 V/s
REFIN Input Sensitivity
0.7/AVDD
V p-p min/max
AC-coupled
0 to AVDD
V max
CMOS-compatible
REFIN Input Capacitance
5.0
pF max
REFIN Input Current
±100
A max
PHASE DETECTOR
Phase Detector Frequen
cy28
MHz max
CHARGE PUMP
With RSET = 4.7 k
High Value
2.5
mA typ
Low Value
0.312
mA typ
RSET Range
2.7/10
k
ICP Three-State Leakage Current
0.2
nA typ
Sink and Source Current Matching
2
% typ
1.25 V ≤ VCP ≤ 2.5 V
ICP vs. VCP
1.5
% typ
1.25 V ≤ VCP ≤ 2.5 V
ICP vs. Temperature
2
% typ
VCP = 2.0 V
LOGIC INPUTS
VINH, Input High Voltage
1.5
V min
VINL, Input Low Voltage
0.6
V max
IINH/IINL, Input Current
±1
A max
CIN, Input Capacitance
3.0
pF max
LOGIC OUTPUTS
VOH, Output High Voltage
DVDD 0.4
V min
CMOS output chosen
IOH, Output High Current
500
A max
VOL, Output Low Voltage
0.4
V max
IOL = 500 A
POWER SUPPLIES
AVDD
3.0/3.6
V min/V max
DVDD
AVDD
VVCO
AVDD
10
mA typ
2.5
mA typ
24.0
mA typ
ICORE = 15 mA
29.0
mA typ
ICORE = 20 mA
3.5 to 11.0
mA typ
RF output stage is programmable
Low Power Sleep Mode4
7
A typ