Data Sheet
ADF4113HV
Rev. B | Page 5 of 20
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
Rating
AV
0.3 V to +7 V
AV
DD to DVDD
0.3 V to +0.3 V
V
P to GND
0.3 V to +18 V
Digital I/O Voltage to GND
0.3 V to V
DD + 0.3 V
Analog I/O Voltage to GND
0.3 V to V
P + 0.3 V
REF
IN, RFINA, RFINB to GND
0.3 V to V
DD + 0.3 V
RF
INA to RFINB
±320 mV
Operating Temperature Range
Industrial (B Version)
40°C to +85°C
Storage Temperature Range
65°C to +150°C
Maximum Junction Temperature
150°C
Reflow, Soldering
Peak Temperature
260°C
Time at Peak Temperature
40 sec
1 GND = AGND = DGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <1 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
The transistor count is 12,150 (CMOS) and 348 (bipolar).
THERMAL RESISTANCE
Table 4. Thermal Resistance
Package Type
θ
JA
Unit
TSSOP
150.4
°C/W
62.82
°C/W
1 Two signal planes (that is, on top and bottom surfaces), two buried planes,
and four thermal vias.
ESD CAUTION