參數(shù)資料
型號: ADA4830-1BCPZ-R7
廠商: Analog Devices Inc
文件頁數(shù): 12/16頁
文件大?。?/td> 0K
描述: IC AMP BATT PROTECT 8LFCSP
標(biāo)準(zhǔn)包裝: 1,500
放大器類型: 差分
電路數(shù): 1
轉(zhuǎn)換速率: 220 V/µs
-3db帶寬: 84MHz
電流 - 電源: 6.8mA
電流 - 輸出 / 通道: 125mA
電壓 - 電源,單路/雙路(±): 2.9 V ~ 5.5 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 8-WFDFN 裸露焊盤,CSP
供應(yīng)商設(shè)備封裝: 8-LFCSP(3x3)
包裝: 帶卷 (TR)
其它名稱: ADA4830-1BCPZ-R7TR
Data Sheet
ADA4830-1
Rev. 0 | Page 5 of 16
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
Supply Voltage (+VS pin)
6 V
Input Voltage Positive Direction (INN, INP)
22 V
Input Voltage Negative Direction (INN, INP)
10 V
Reference Voltage (VREF pin)
+V
S + 0.3 V
Power Dissipation
Storage Temperature Range
65°C to +125°C
Operating Temperature Range
40°C to +125°C
Lead Temperature (Soldering, 10 sec)
260°C
Junction Temperature
150°C
THERMAL RESISTANCE
θJA is specified for the device soldered to a high thermal
conductivity, 4-layer (2s2p) circuit board, as described in
EIA/JESD 51-7.
Table 4.
Package Type
θJA
Unit
8-Lead LFCSP
116
°C/W
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the ADA4830-1
package is limited by the associated rise in junction temperature
(TJ) on the die. At approximately 150°C, which is the glass
transition temperature, the plastic changes its properties.
Exceeding a junction temperature of 150°C for an extended
time can result in changes in the silicon devices, potentially
causing failure.
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. The quiescent
power is the voltage between the supply pins (VS) times the
quiescent current (IS). The power dissipated due to load drive
depends on the particular application. The power due to load
drive is calculated by multiplying the load current by the
associated voltage drop across the device. RMS voltages and
currents must be used in these calculations.
Airflow increases heat dissipation, effectively reducing θJA.
Figure 2 shows the maximum power dissipation in the package
vs. the ambient temperature for the 8-lead LFCSP (116°C/W) on
a JEDEC standard 4-layer board. θJA values are approximate.
Figure 2. Maximum Power Dissipation vs.
Ambient Temperature for a 4-Layer Board
ESD CAUTION
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
10
20
30
40
50
60
70
80
90
100
MA
XI
MU
M
PO
W
ER
D
ISSI
PA
TION
(
W)
AMBIENT TEMPERATURE (°C)
10020-
002
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