V+
參數(shù)資料
型號: AD8651ARMZ-R2
廠商: Analog Devices Inc
文件頁數(shù): 14/20頁
文件大?。?/td> 0K
描述: IC OPAMP VF CMOS 50MHZ LN 8MSOP
標(biāo)準(zhǔn)包裝: 1
系列: DigiTrim®
放大器類型: 電壓反饋
電路數(shù): 1
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 41 V/µs
增益帶寬積: 50MHz
電流 - 輸入偏壓: 1pA
電壓 - 輸入偏移: 100µV
電流 - 電源: 9.5mA
電流 - 輸出 / 通道: 40mA
電壓 - 電源,單路/雙路(±): 2.7 V ~ 5.5 V,±1.35 V ~ 2.75 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 8-TSSOP,8-MSOP(0.118",3.00mm 寬)
供應(yīng)商設(shè)備封裝: 8-MSOP
包裝: 標(biāo)準(zhǔn)包裝
其它名稱: AD8651ARMZ-R2DKR
Data Sheet
AD8651/AD8652
Rev. D | Page 3 of 20
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
V+ = 2.7 V, V= 0 V, VCM = V+/2, TA = 25°C, unless otherwise specified.
Table 1.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
0 V ≤ VCM ≤ 2.7 V
100
350
μV
–40°C ≤ TA ≤ +85°C, 0 V ≤ VCM ≤ 2.7 V
1.4
mV
–40°C ≤ TA ≤ +125°C, 0 V ≤ VCM ≤ 2.7 V
1.6
mV
0 V ≤ VCM ≤ 2.7 V
90
300
μV
–40°C ≤ TA ≤ +125°C, 0 V ≤ VCM ≤ 2.7 V
0.4
1.3
mV
Offset Voltage Drift
TCVOS
4
μV/°C
Input Bias Current
IB
1
10
pA
–40°C ≤ TA ≤ +125°C
600
pA
Input Offset Current
IOS
1
10
pA
–40°C ≤ TA ≤ +85°C
30
pA
–40°C ≤ TA ≤ +125°C
600
pA
Input Voltage Range
VCM
–0.1
+2.8
V
Common-Mode Rejection Ratio
CMRR
V+ = 2.7 V, –0.1 V < VCM < +2.8 V
75
95
dB
–40°C ≤ TA ≤ +85°C, –0.1 V < VCM < +2.8 V
70
88
dB
–40°C ≤ TA ≤ +125°C, –0.1 V < VCM < +2.8 V
65
85
dB
V+ = 2.7 V, –0.1 V < VCM < +2.8 V
77
95
dB
–40°C ≤ TA ≤ +125°C, –0.1 V < VCM < +2.8 V
73
90
dB
Large Signal Voltage Gain
AVO
RL = 1 k, 200 mV < VO < 2.5 V
100
115
dB
RL = 1 k, 200 mV < VO < 2.5 V, TA = 85°C
100
114
dB
RL = 1 k, 200 mV < VO < 2.5 V, TA = 125°C
95
108
dB
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
IL = 250 μA, –40°C ≤ TA ≤ +125°C
2.67
V
Output Voltage Low
VOL
IL = 250 μA, –40°C ≤ TA ≤ +125°C
30
mV
Short-Circuit Limit
ISC
Sourcing
80
mA
Sinking
80
mA
Output Current
IO
40
mA
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = 2.7 V to 5.5 V, VCM = 0 V
76
94
dB
–40°C ≤ TA ≤ +125°C
74
93
dB
Supply Current
ISY
IO = 0
9
12
mA
–40°C ≤ TA ≤ +125°C
14.5
mA
IO = 0
17.5
19.5
mA
–40°C ≤ TA ≤ +125°C
22.5
mA
INPUT CAPACITANCE
CIN
Differential
6
pF
Common Mode
9
pF
DYNAMIC PERFORMANCE
Slew Rate
SR
G = 1, RL = 10 k
41
V/μs
Gain Bandwidth Product
GBP
G = 1
50
MHz
Settling Time, 0.01%
G = ±1, 2 V step
0.2
μs
Overload Recovery Time
VIN × G = 1.48 V+
0.1
μs
Total Harmonic Distortion + Noise
THD + N
G = 1, RL = 600 , f = 1 kHz, VIN = 2 V p-p
0.0006
%
NOISE PERFORMANCE
Voltage Noise Density
en
f = 10 kHz
5
nV/√Hz
f = 100 kHz
4.5
nV/√Hz
Current Noise Density
in
f = 10 kHz
4
fA/√Hz
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