AD8531/AD8532/AD8534
Rev. F | Page 4 of 20
VS = 5.0 V, VCM = 2.5 V, TA = 25°C, unless otherwise noted.
Table 2.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
25
mV
40°C ≤ TA ≤ +85°C
30
mV
Input Bias Current
IB
5
50
pA
40°C ≤ TA ≤ +85°C
60
pA
Input Offset Current
IOS
1
25
pA
40°C ≤ TA ≤ +85°C
30
pA
Input Voltage Range
0
5
V
Common-Mode Rejection Ratio
CMRR
VCM = 0 V to 5 V
38
47
dB
Large Signal Voltage Gain
AVO
RL = 2 kΩ, VO = 0.5 V to 4.5 V
15
80
V/mV
Offset Voltage Drift
ΔVOS/ΔT
40°C ≤ TA ≤ +85°C
20
μV/°C
Bias Current Drift
ΔIB/ΔT
50
fA/°C
Offset Current Drift
ΔIOS/ΔT
20
fA/°C
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
IL = 10 mA
4.9
4.94
V
40°C ≤ TA ≤ +85°C
4.85
V
Output Voltage Low
VOL
IL = 10 mA
50
100
mV
40°C ≤ TA ≤ +85°C
125
mV
Output Current
IOUT
±250
mA
Closed-Loop Output Impedance
ZOUT
f = 1 MHz, AV = 1
40
Ω
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = 3 V to 6 V
45
55
dB
Supply Current/Amplifier
ISY
VO = 0 V
0.75
1.25
mA
40°C ≤ TA ≤ +85°C
1.75
mA
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 2 kΩ
5
V/μs
Full-Power Bandwidth
BWp
1% distortion
350
kHz
Settling Time
tS
To 0.01%
1.4
μs
Gain Bandwidth Product
GBP
3
MHz
Phase Margin
фo
70
Degrees
Channel Separation
CS
f = 1 kHz, RL = 2 kΩ
65
dB
NOISE PERFORMANCE
Voltage Noise Density
en
f = 1 kHz
45
nV/√Hz
f = 10 kHz
30
nV/√Hz
Current Noise Density
in
f = 1 kHz
0.05
pA/√Hz