AD8515
Rev. D | Page 4 of 16
VS = 3.0 V, VCM = VS/2, TA = 25°C, unless otherwise noted.
Table 2.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
VCM = VS/2
1
6
mV
40°C < TA < +125°C
8
mV
Input Bias Current
IB
VS = 3.0 V
2
30
pA
40°C < TA < +85°C
600
pA
40°C < TA < +125°C
8
nA
Input Offset Current
IOS
1
10
pA
40°C < TA < +125°C
500
pA
Input Voltage Range
0
3
V
Common-Mode Rejection Ratio
CMRR
0 V ≤ VCM ≤ 3.0 V
54
dB
40°C < TA < +125°C
50
dB
Large Signal Voltage Gain
AVO
RL = 100 kΩ, 0.3 V ≤ VOUT ≤ 2.7 V
250
1000
V/mV
Offset Voltage Drift
ΔVOS/ΔT
4
μV/°C
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
IL = 100 μA, 40°C < TA < +125°C
2.99
V
IL = 750 μA, 40°C < TA < +125°C
2.98
V
Output Voltage Low
VOL
IL = 100 μA, 40°C < TA < +125°C
10
mV
IL = 750 μA, 40°C < TA < +125°C
20
mV
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = 1.8 V to 5.0 V
65
85
dB
40°C < TA < +125°C
57
80
dB
Supply Current/Amplifier
ISY
VOUT = VS/2
350
450
μA
40°C < TA < +125°C
500
μA
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 10 kΩ
2.7
V/μs
Gain Bandwidth Product
GBP
5
MHz
NOISE PERFORMANCE
Voltage Noise Density
en
f = 1 kHz
22
nV/√Hz
f = 10 kHz
20
nV/√Hz
Current Noise Density
in
f = 1 kHz
0.05
pA/√Hz