AD8500
Rev. B | Page 3 of 12
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
@ VS = 5 V, VCM = VS/2, TA = 25°C, unless otherwise noted.
Table 2.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
0 V < VCM < 5 V
0.235
1
mV
Offset Voltage Drift
VOS/T
40°C < TA < +85°C
3
10
μV/°C
Input Voltage Range
0.3
+5.3
V
Input Bias Current
IB
1
10
pA
40°C < TA < +85°C
100
pA
40°C < TA < +125°C
600
pA
Input Offset Current
IOS
0.5
5
pA
40°C < TA < +85°C
50
pA
40°C < TA < +125°C
100
pA
Common-Mode Rejection Ratio
CMRR
0 V < VCM < 5 V
75
90
dB
40°C < TA < +85°C
70
90
dB
Large Signal Voltage Gain
AVO
0.1 V < VOUT < 4.9 V
98
120
dB
0.1 V < VOUT < 4.9 V; 40°C < TA < +85°C
80
dB
Input Capacitance
CDIFF
2
pF
CCM
4.5
pF
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
RLOAD = 100 kΩ to GND
4.970
4.995
V
RLOAD = 10 kΩ to GND
4.900
4.960
V
Output Voltage Low
VOL
RLOAD = 100 kΩ to VS
0.85
5
mV
RLOAD = 10 kΩ to VS
6.5
15
mV
Short-Circuit Current
ISC
VOUT = GND
±5
mA
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
1.8 V < VS < 5 V
90
110
dB
40°C < TA < +85°C
80
dB
Supply Current/Amplifier
ISY
VO = VS/2
0.75
1
μA
40°C < TA < +85°C
1.5
μA
40°C < TA < +125°C
2
μA
DYNAMIC PERFORMANCE
Slew Rate
SR
0.004
V/μs
Gain Bandwidth Product
GBP
7
kHz
Phase Margin
O
60
Degrees
NOISE PERFORMANCE
Peak-to-Peak Noise
0.1 Hz to 10 Hz
6
μV p-p
Voltage Noise Density
en
f = 1 kHz
190
nV/√Hz
Current Noise Density
in
f = 1 kHz
0.1
pA/√Hz