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參數(shù)資料
| 型號： | AD8133ACPZ-REEL7 |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 12/16頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC OPAMP DIFF TRPL LDIST 24LFCSP |
| 標準包裝： | 1 |
| 放大器類型： | 差分 |
| 電路數(shù)： | 3 |
| 輸出類型： | 差分 |
| 轉(zhuǎn)換速率： | 1600 V/µs |
| -3db帶寬： | 450MHz |
| 電流 - 輸入偏壓： | 67µA |
| 電壓 - 輸入偏移： | 6000µV |
| 電流 - 電源： | 28mA |
| 電流 - 輸出 / 通道： | 90mA |
| 電壓 - 電源，單路/雙路(±)： | 4.5 V ~ 12 V，±2.25 V ~ 6 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 24-VFQFN 裸露焊盤，CSP |
| 供應(yīng)商設(shè)備封裝： | 24-LFCSP-VQ（4x4） |
| 包裝： | 標準包裝 |
| 產(chǎn)品目錄頁面： | 765 (CN2011-ZH PDF) |
| 其它名稱： | AD8133ACPZ-REEL7DKR |
AD8133
Rev. 0 | Page 5 of 16
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
Supply Voltage
12 V
All VOCM
±VS
Power Dissipation
See Figure 3
Input Common-Mode Voltage
±VS
Storage Temperature
65°C to +125°C
Operating Temperature Range
40°C to +85°C
Lead Temperature Range
(Soldering 10 sec)
300°C
Junction Temperature
150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rat-
ing only and functional operation of the device at these or any
other conditions above those indicated in the operational sec-
tion of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, i.e., θJA is specified
for the device soldered in a circuit board in still air.
Table 4. Thermal Resistance with the Underside Pad
Connected to the Plane
Package Type/PCB Type
θJA
Unit
24-Lead LFCSP/4-Layer
70
°C/W
Maximum Power Dissipation
The maximum safe power dissipation in the AD8133 package is
limited by the associated rise in junction temperature (TJ) on
the die. At approximately 150°C, which is the glass transition
temperature, the plastic changes its properties. Even temporarily
exceeding this temperature limit may change the stresses that
the package exerts on the die, permanently shifting the para-
metric performance of the AD8133. Exceeding a junction tem-
perature of 175°C for an extended period of time can result in
changes in the silicon devices potentially causing failure.
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. The quiescent
power is the voltage between the supply pins (VS) times the
quiescent current (IS). The load current consists of differential
and common-mode currents flowing to the loads, as well as
currents flowing through the internal differential and common-
mode feedback loops. The internal resistor tap used in the
common-mode feedback loop places a 4 k differential load on
the output. RMS output voltages should be considered when
dealing with ac signals.
Airflow reduces θJA. Also, more metal directly in contact with
the package leads from metal traces, through holes, ground,
and power planes reduces the θJA. The exposed paddle on the
underside of the package must be soldered to a pad on the PCB
surface that is thermally connected to a copper plane in order to
achieve the specified θJA.
Figure 3 shows the maximum safe power dissipation in the
package versus ambient temperature for the 24-lead LFCSP
(70°C/W) package on a JEDEC standard 4-layer board with the
underside paddle soldered to a pad that is thermally connected
to a PCB plane. θJA values are approximations.
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
–40
–20
0
20
40
60
80
04769-0-024
AMBIENT TEMPERATURE (
°C)
M
A
XIM
U
M
POW
E
R
D
ISSIPA
TION
(
W
)
LFCSP
Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features proprie-
tary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic
discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of
functionality.
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