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| 型號： | AD8079BRZ-REEL7 |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC AMP BUF DUAL LP LDIST 8SOIC |
| 標(biāo)準(zhǔn)包裝： | 1,000 |
| 放大器類型： | 緩沖器 |
| 電路數(shù)： | 2 |
| 轉(zhuǎn)換速率： | 800 V/µs |
| -3db帶寬： | 260MHz |
| 電流 - 輸入偏壓： | 3µA |
| 電壓 - 輸入偏移： | 10000µV |
| 電流 - 電源： | 10mA |
| 電流 - 輸出 / 通道： | 70mA |
| 電壓 - 電源，單路/雙路(±)： | 6 V ~ 12 V，±3 V ~ 6 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SOIC |
| 包裝： | 帶卷 (TR) |
9
REV. A
AD8079
–3–
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation
2
Small Outline Package (R) . . . . . . . . . . . . . . . . . . 0.9 Watts
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±V
S
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range . . . . . . . . . . . . . –65
°C to +125°C
Operating Temperature Range (A Grade) . . . – 40
°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300
°C
NOTES
1Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2Specification is for device in free air:
8-Pin SOIC Package:
θ
JA = 160°C/Watt
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8079 is limited by the associated rise in junction tempera-
ture. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition tem-
perature of the plastic, approximately +150
°C. Exceeding this
limit temporarily may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of +175
°C for an extended
period can result in device failure.
While the AD8079 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (+150
°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum
power derating curves.
MAXIMUM
POWER
DISSIPATION
–
Watts
AMBIENT TEMPERATURE –
°C
2.0
1.5
0
–50
90
–40 –30 –20 –10
0
10 20
30 40
50
60
70
1.0
0.5
80
TJ = +150°C
8-PIN SOIC PACKAGE
Figure 2. Plot of Maximum Power Dissipation vs.
Temperature
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8079 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ORDERING GUIDE
Temperature
Package
Model
Gain
Range
Description
Option
AD8079AR
G = +2.0
–40
°C to +85°C
8-Pin Plastic SOIC
SO-8
AD8079AR-REEL
G = +2.0
–40
°C to +85°C
REEL SOIC
SO-8
AD8079AR-REEL7
G = +2.0
–40
°C to +85°C
REEL 7 SOIC
SO-8
AD8079BR
G = +2.2
–40
°C to +85°C
8-Pin Plastic SOIC
SO-8
AD8079BR-REEL
G = +2.2
–40
°C to +85°C
REEL SOIC
SO-8
AD8079BR-REEL7
G = +2.2
–40
°C to +85°C
REEL 7 SOIC
SO-8
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