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參數(shù)資料
| 型號： | AD8048AR |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 音頻／視頻放大 |
| 英文描述： | 250 MHz, General Purpose Voltage Feedback Op Amps |
| 中文描述： | VIDEO AMPLIFIER, PDSO8 |
| 封裝： | PLASTIC, SOIC-8 |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 478K |
| 代理商： | AD8048AR |
AD8047/AD8048
REV. 0
–3–
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by these de-
vices is limited by the associated rise in junction temperature.
The maximum safe junction temperature for plastic encapsu-
lated devices is determined by the glass transition temperature
of the plastic, approximately +150
°
C. Exceeding this limit tem-
porarily may cause a shift in parametric performance due to a
change in the stresses exerted on the die by the package. Exceed-
ing a junction temperature of +175
°
C for an extended period can
result in device failure.
While the AD8047 and AD8048 are internally short circuit pro-
tected, this may not be sufficient to guarantee that the maxi-
mum junction temperature (+150
°
C) is not exceeded under all
conditions. To ensure proper operation, it is necessary to ob-
serve the maximum power derating curves.
2.0
0
–50
80
1.5
0.5
–40
1.0
0
10
–10
AMBIENT TEMPERATURE –
°
C
–20
–30
20 30 40 50 60 70
90
M
T
J
= +150
°
C
8-PIN MINI-DIP PACKAGE
8-PIN SOIC PACKAGE
Figure 2. Plot of Maximum Power Dissipation vs.
Temperature
ORDERING GUIDE
Temperature
Range
Package
Description Option*
Package
Model
AD8047AN
AD8047AR
AD8047-EB
–40
°
C to +85
°
C
–40
°
C to +85
°
C
Plastic DIP
SOIC
Evaluation
Board
Plastic DIP
SOIC
Evaluation
Board
N-8
R-8
AD8048AN
AD8048AR
AD8048-EB
–40
°
C to +85
°
C
–40
°
C to +85
°
C
N-8
R-8
*N = Plastic DIP; R= SOIC (Small Outline Integrated Circuit)
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Voltage Swing
×
Bandwidth Product (AD8047) . . . 180 V – MHz
(AD8048) . . . 250 V
– MHz
Internal Power Dissipation
2
Plastic Package (N) . . . . . . . . . . . . . . . . . . . . . . . . 1.3 Watts
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . 0.9 Watts
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . .
±
V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . .
±
1.2 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range (N, R) . . . . . . . .–65
°
C to +125
°
C
Operating Temperature Range (A Grade) . . . –40
°
C to +85
°
C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300
°
C
NOTES
1
Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only, and functional
operation of the device at these or any other conditions above those indicated in the
operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Pin Plastic DIP Package:
θ
JA
= 90
°
C/Watt
8-Pin SOIC Package:
θ
JA
= 140
°
C/Watt
WARNING!
ESD SENSITIVE DEVICE
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although these devices feature proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
METALIZATION PHOTOS
Dimensions shown in inches and (mm).
Connect Substrate to –V
S
.
AD8047
+V
S
V
OUT
–V
S
–IN
+IN
0.045
0.044
AD8048
+V
S
–V
S
–OUT
–IN
+IN
0.045
0.044
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