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參數(shù)資料
| 型號： | AD8032B |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | 2.7 V, 800 uA, 80 MHz Rail-to-Rail I/O Amplifiers |
| 中文描述： | 2.7伏，800微安，80 MHz的軌到軌輸入/輸出放大器 |
| 文件頁數(shù)： | 5/16頁 |
| 文件大?。?/td> | 247K |
| 代理商： | AD8032B |
AD8031/AD8032
–5–
REV. B
ORDERING GUIDE
Temperature
Range
Package
Descriptions
Package
Options
Brand
Code
Model
AD8031AN
AD8031AR
AD8031AR-REEL
AD8031AR-REEL7
AD8031ART-REEL
AD8031ART-REEL7
AD8031BN
AD8031BR
AD8031BR-REEL
AD8031BR-REEL7
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
8-Lead Plastic DIP
8-Lead SOIC
13" Tape and Reel
7" Tape and Reel
13" Tape and Reel
7" Tape and Reel
8-Lead Plastic DIP
8-Lead SOIC
13" Tape and Reel
7" Tape and Reel
N-8
SO-8
SO-8
SO-8
RT-5
RT-5
N-8
SO-8
SO-8
SO-8
H0A
H0A
AD8032AN
AD8032AR
AD8032AR-REEL
AD8032AR-REEL7
AD8032ARM
AD8032ARM-REEL
AD8032ARM-REEL7
AD8032BN
AD8032BR
AD8032BR-REEL
AD8032BR-REEL7
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
8-Lead Plastic DIP
8-Lead SOIC
13" Tape and Reel
7" Tape and Reel
8-Lead
μ
SOIC
13" Tape and Reel
7" Tape and Reel
8-Lead Plastic DIP
8-Lead SOIC
13" Tape and Reel
7" Tape and Reel
N-8
SO-8
SO-8
SO-8
RM-8
RM-8
RM-8
N-8
SO-8
SO-8
SO-8
H9A
H9A
H9A
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +12.6 V
Internal Power Dissipation
2
Plastic DIP Package (N) . . . . . . . . . . . . . . . . . . . 1.3 Watts
Small Outline Package (R) . . . . . . . . . . . . . . . . . . 0.8 Watts
μ
SOIC (RM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 Watts
SOT-23-5 (RT) . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 Watts
Input Voltage (Common-Mode) . . . . . . . . . . . . .
±
V
S
±
0.5 V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . .
±
3.4 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range (N, R, RM, RT)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65
°
C to +125
°
C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300
°
C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for the device in free air:
8-Lead Plastic DIP Package:
θ
= 90
°
C/W.
8-Lead SOIC Package:
θ
JA
= 155
°
C/W.
8-Lead
μ
SOIC Package:
θ
JA
= 200
°
C/W.
5-Lead SOT-23-5 Package:
θ
JA
= 240
°
C/W.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8031/AD8032 are limited by the associated rise in junction
temperature. The maximum safe junction temperature for plas-
tic encapsulated devices is determined by the glass transition
temperature of the plastic, approximately +150
°
C. Exceeding
this limit temporarily may cause a shift in parametric perfor-
mance due to a change in the stresses exerted on the die by
the package. Exceeding a junction temperature of +175
°
C for
an extended period can result in device failure.
While the AD8031/AD8032 are internally short circuit pro-
tected, this may not be sufficient to guarantee that the maxi-
mum junction temperature (+150
°
C) is not exceeded under
all conditions. To ensure proper operation, it is necessary to
observe the maximum power derating curves shown in Figure 2.
AMBIENT TEMPERATURE –
8
C
2.0
1.5
0
–50
80
–40
M
–30 –20 –10
0
10
20
30
40
50
60
70
1.0
0.5
90
T
J
= +150
8
C
8-LEAD SOIC PACKAGE
8-LEAD
m
SOIC
SOT-23-5
8-LEAD PLASTIC
DIP PACKAGE
Figure 2. Maximum Power Dissipation vs. Temperature
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8031/AD8032 feature proprietary ESD protection circuitry, permanent damage
may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AD8032BN | 2.7 V, 800 uA, 80 MHz Rail-to-Rail I/O Amplifiers |
| AD8032BR | 2.7 V, 800 uA, 80 MHz Rail-to-Rail I/O Amplifiers |
| AD8032BR-REEL | 2.7 V, 800 uA, 80 MHz Rail-to-Rail I/O Amplifiers |
| AD8032BR-REEL7 | 2.7 V, 800 uA, 80 MHz Rail-to-Rail I/O Amplifiers |
| AD8031BR-REEL | MANAGED MC HDC MODULE 10/100TX/FXMM 1300SC 2KM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AD8032BN | 制造商:Analog Devices 功能描述:OP Amp Dual Volt Fdbk R-R I/O 制造商:Rochester Electronics LLC 功能描述:PDIP DUAL LOW POWER OP AMP - Bulk |
| AD8032BNZ | 功能描述:IC OPAMP VF R-R DUAL LP 8DIP RoHS:是 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:Excalibur™ 放大器類型:J-FET 電路數(shù):1 輸出類型:- 轉(zhuǎn)換速率:45 V/µs 增益帶寬積:10MHz -3db帶寬:- 電流 - 輸入偏壓:20pA 電壓 - 輸入偏移:490µV 電流 - 電源:1.7mA 電流 - 輸出 / 通道:48mA 電壓 - 電源，單路/雙路(±):4.5 V ~ 38 V，±2.25 V ~ 19 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| AD8032BR | 功能描述:IC OPAMP VF R-R DUAL LP 8SOIC RoHS:否 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 放大器類型:音頻 電路數(shù):2 輸出類型:- 轉(zhuǎn)換速率:5 V/µs 增益帶寬積:12MHz -3db帶寬:- 電流 - 輸入偏壓:100nA 電壓 - 輸入偏移:500µV 電流 - 電源:6mA 電流 - 輸出 / 通道:50mA 電壓 - 電源，單路/雙路(±):4 V ~ 32 V，±2 V ~ 16 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:8-TSSOP（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-TSSOP 包裝:管件 |
| AD8032BR-REEL | 制造商:Analog Devices 功能描述:OP Amp Dual Volt Fdbk R-R I/O |
| AD8032BR-REEL7 | 功能描述:IC OPAMP VF R-R DUAL LP 8SOIC RoHS:否 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 放大器類型:J-FET 電路數(shù):2 輸出類型:- 轉(zhuǎn)換速率:3.5 V/µs 增益帶寬積:1MHz -3db帶寬:- 電流 - 輸入偏壓:30pA 電壓 - 輸入偏移:2000µV 電流 - 電源:200µA 電流 - 輸出 / 通道:- 電壓 - 電源，單路/雙路(±):7 V ~ 36 V，±3.5 V ~ 18 V 工作溫度:0°C ~ 70°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 |
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