參數(shù)資料
型號(hào)： AD8030AR
廠商： Analog Devices Inc
文件頁(yè)數(shù)： 24/25頁(yè)
文件大?。?/td> 0K
描述： IC AMP GP R-R DUAL LP 8SOIC
標(biāo)準(zhǔn)包裝： 98
放大器類型： 通用
電路數(shù)： 2
輸出類型： 滿擺幅
轉(zhuǎn)換速率： 63 V/µs
-3db帶寬： 125MHz
電流 - 輸入偏壓： 1.7µA
電壓 - 輸入偏移： 2000µV
電流 - 電源： 1.4mA
電流 - 輸出 / 通道： 170mA
電壓 - 電源，單路/雙路(±)： 2.7 V ~ 12 V，±1.35 V ~ 6 V
工作溫度： -40°C ~ 125°C
安裝類型： 表面貼裝
封裝/外殼： 8-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝： 8-SO
包裝： 管件
Data Sheet
AD8029/AD8030/AD8040
Rev. B | Page 7 of 24
ABSOLUTE MAXIMUM RATINGS
Table 4. AD8029/AD8030/AD8040 Stress Ratings
Parameter
Rating
Supply Voltage
12.6 V
Power Dissipation
Common-Mode Input Voltage
±VS ± 0.5 V
Differential Input Voltage
±1.8 V
Storage Temperature
–65°C to +125°C
Operating Temperature Range
–40°C to +125°C
Lead Temperature Range
(Soldering 10 sec)
300°C
Junction Temperature
150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the AD8029/AD8030/
AD8040 package is limited by the associated rise in junction
temperature (TJ) on the die. The plastic encapsulating the die
locally reaches the junction temperature. At approximately
150°C, which is the glass transition temperature, the plastic
changes its properties. Even temporarily exceeding this
temperature limit may change the stresses that the package
exerts on the die, permanently shifting the parametric
performance of the AD8029/AD8030/AD8040. Exceeding a
junction temperature of 175°C for an extended period can
result in changes in silicon devices, potentially causing failure.
The still-air thermal properties of the package and PCB (θJA),
ambient temperature (TA), and the total power dissipated in the
package (PD) determine the junction temperature of the die.
The junction temperature can be calculated as
TJ = TA + (PD × θJA)
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. The quiescent
power is the voltage between the supply pins (VS) times the
quiescent current (IS). Assuming the load (RL) is referenced to
midsupply, the total drive power is VS/2 × IOUT, some of which is
dissipated in the package and some in the load (VOUT × IOUT).
The difference between the total drive power and the load
power is the drive power dissipated in the package.
PD = Quiescent Power + (Total Drive Power – Load Power)
(
)
L
OUT
L
OUT
S
D
R
V
R
V
I
V
P
2
–
2
×
+
×
=
RMS output voltages should be considered. If RL is referenced to
VS–, as in single-supply operation, then the total drive power is
VS × IOUT.
If the rms signal levels are indeterminate, consider the worst
case, when VOUT = VS/4 for RL to midsupply:
(
) (
)
L
S
D
R
V
I
V
P
2
4
/
+
×
=
In single-supply operation with RL referenced to VS–, worst case
is VOUT = VS/2.
Airflow increases heat dissipation, effectively reducing θJA. Also,
more metal directly in contact with the package leads from
metal traces, through holes, ground, and power planes reduce
the θJA. Care must be taken to minimize parasitic capacitances
at the input leads of high speed op amps, as discussed in the
Figure 6 shows the maximum safe power dissipation in the
package versus the ambient temperature for the SOIC-8
(125°C/W), SOT23-8 (160°C/W), SOIC-14 (90°C/W),
TSSOP-14 (120°C/W), and SC70-6 (208°C/W) packages on a
JEDEC standard 4-layer board. θJA values are approximations.
–40
–20 –10
–30
0
10 20 30 40 50 60 70 80 90 100 110 120
2.5
MAXIMUM
POWER
DISSIPATION
(W)
1.0
0.5
1.5
2.0
0
AMBIENT TEMPERATURE (°C)
SOIC-8
TSSOP-14
SOIC-14
SOT-23-8
SC70-6
03679-A-018
Figure 6. Maximum Power Dissipation
Output Short Circuit
Shorting the output to ground or drawing excessive current
from the AD8029/AD8030/AD8040 could cause catastrophic
failure.
ESD CAUTION
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AD8030AR 制造商:Analog Devices 功能描述:AMP LOW POWER RRI/O 8030 SOIC8
AD8030AR-EBZ 功能描述:BOARD EVAL FOR AD8030AR RoHS:是 類別:編程器，開(kāi)發(fā)系統(tǒng) >> 評(píng)估板 - 運(yùn)算放大器 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:1 系列:-
AD8030ARJ 制造商:Analog Devices 功能描述:OP AMP DUAL GP R-R I/O 6V/12V 8PIN SOT-23 - Bulk
AD8030ARJ-EBZ 功能描述:BOARD EVAL FOR AD8030ARJ RoHS:是 類別:編程器，開(kāi)發(fā)系統(tǒng) >> 評(píng)估板 - 運(yùn)算放大器 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:1 系列:-
AD8030ARJ-R2 制造商:Analog Devices 功能描述:OP Amp Dual GP R-R I/O ±6V/12V 8-Pin SOT-23 T/R 制造商:Rochester Electronics LLC 功能描述:LOW POWER R-R I/O AMP - Bulk
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