參數(shù)資料
型號: AD8014ARZ-REEL7
廠商: Analog Devices Inc
文件頁數(shù): 6/11頁
文件大?。?/td> 0K
描述: IC OPAMP CF LP LN LDIST 8SOIC
標(biāo)準(zhǔn)包裝: 750
放大器類型: 電流反饋
電路數(shù): 1
轉(zhuǎn)換速率: 4600 V/µs
-3db帶寬: 480MHz
電流 - 輸入偏壓: 5µA
電壓 - 輸入偏移: 2000µV
電流 - 電源: 1.15mA
電流 - 輸出 / 通道: 50mA
電壓 - 電源,單路/雙路(±): 4.5 V ~ 12 V,±2.25 V ~ 6 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SOIC
包裝: 帶卷 (TR)
AD8014
–4–
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8014 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.6 V
Internal Power Dissipation2
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . 0.75 W
SOT-23-5 Package (RT) . . . . . . . . . . . . . . . . . . . . . . 0.5 W
Input Voltage Common Mode . . . . . . . . . . . . . . . . . . . . . .
±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . .
±2.5 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range . . . . . . . . . . . . –65
°C to +150°C
Operating Temperature Range . . . . . . . . . . . –40
°C to +85°C
Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . . +300
°C
ESD (Human Body Model) . . . . . . . . . . . . . . . . . . . . +1500 V
NOTES
1 Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only, functional operation of the
device at these or any other conditions above listed in the operational section of this
specification is not implied. Exposure to Absolute Maximum Ratings for any
extended periods may affect device reliability.
2 Specification is for device in free air at 25
°C.
8-Lead SOIC Package
θ
JA = 155
°C/W.
5-Lead SOT-23 Package
θ
JA = 240
°C/W.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8014
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic. This is approximately +150
°C. Even temporarily ex-
ceeding this limit may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the pack-
age. Exceeding a junction temperature of +175
°C may result in
device failure.
The output stage of the AD8014 is designed for large load cur-
rent capability. As a result, shorting the output to ground or to
power supply sources may result in a very large power dissipa-
tion. To ensure proper operation it is necessary to observe the
maximum power derating tables.
Table I. Maximum Power Dissipation vs. Temperature
Ambient Temp
Power Watts
C
SOT-23-5
SOIC
–40
0.79
1.19
–20
0.71
1.06
0
0.63
0.94
+20
0.54
0.81
+40
0.46
0.69
+60
0.38
0.56
+80
0.29
0.44
+100
0.21
0.31
Rev. C
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