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| 型號： | AD7812 |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs(350kSPS八通道采樣A/D轉(zhuǎn)換器) |
| 中文描述： | 350 kSPS的，10位4-/8-Channel采樣ADC（350kSPS八通道采樣的A / D轉(zhuǎn)換器） |
| 文件頁數(shù)： | 2/20頁 |
| 文件大?。?/td> | 215K |
| 代理商： | AD7812 |
–2–
REV. A
AD7811/AD7812–SPECIFICATIONS
Parameter
Y Version
Units
Test Conditions/Comments
DYNAMIC PERFORMANCE
Signal to (Noise + Distortion) Ratio
1
Total Harmonic Distortion (THD)
1
Peak Harmonic or Spurious Noise
1
Intermodulation Distortion
1, 2
Second Order Terms
Third Order Terms
Channel-to-Channel Isolation
1, 2
f
IN
= 30 kHz Any Channel, f
SAMPLE
= 350 kHz
V
REF
Internal or External
58
–66
–80
dB min
dB max
dB typ
fa = 29 kHz, fb = 30 kHz
–67
–67
–80
dB max
dB max
dB typ
f
IN
= 20 kHz
DC ACCURACY
Resolution
Minimum Resolution for Which
No Missing Codes are Guaranteed
Relative Accuracy
1
Differential Nonlinearity
1
Gain Error
1
Gain Error Match
1
Offset Error
1
Offset Error Match
1
Any Channel
10
Bits
10
±
1
±
1
±
2
±
0.75
±
2
±
0.75
Bits
LSB max
LSB max
LSB max
LSB max
LSB max
LSB max
ANALOG INPUT
Input Voltage Range
0
V
REF
±
1
20
V min
V max
μ
A max
pF max
Input Leakage Current
2
Input Capacitance
2
REFERENCE INPUTS
2
V
REF
Input Voltage Range
1.2
V
DD
±
3
20
V min
V max
μ
A max
pF max
Input Leakage Current
Input Capacitance
ON-CHIP REFERENCE
Reference Error
Temperature Coefficient
Nominal 2.5 V
±
2.5
50
% max
ppm/
°
C typ
LOGIC INPUTS
2
V
INH,
Input High Voltage
V
INL,
Input Low Voltage
V
INH,
Input High Voltage
V
INL,
Input Low Voltage
Input Current, I
IN
Input Capacitance, C
IN
2.4
0.8
2
0.4
±
1
8
V min
V max
V min
V max
μ
A max
pF max
V
DD
= 5 V
±
10%
V
DD
= 5 V
±
10%
V
DD
= 3 V
±
10%
V
DD
= 3 V
±
10%
Typically 10 nA, V
IN
= 0 V to V
DD
LOGIC OUTPUTS
Output High Voltage, V
OH
I
SOURCE
= 200
μ
A
V
DD
= 5 V
±
10%
V
DD
= 3 V
±
10%
I
SINK
= 200
μ
A
4
2.4
V min
V min
Output Low Voltage, V
OL
0.4
±
1
15
V max
μ
A max
pF max
High Impedance Leakage Current
High Impedance Capacitance
CONVERSION RATE
Conversion time
Track/Hold Acquisition Time
1
2.3
200
μ
s max
ns max
(V
DD
= +2.7 V to +3.6 V, V
DD
= +5 V
6
10%, GND = 0 V, V
REF
= +V
DD
[EXT]. All specifications –40
8
C to +105
8
C
unless otherwise noted.)
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