參數(shù)資料
型號(hào)： AD660BN
廠商： ANALOG DEVICES INC
元件分類： DAC
英文描述： Monolithic 16-Bit Serial/Byte DACPORT
中文描述： SERIAL, PARALLEL, 8 BITS INPUT LOADING, 2.5 us SETTLING TIME, 16-BIT DAC, PDIP24
封裝： 0.300 INCH, PLASTIC, DIP-24
文件頁(yè)數(shù)： 3/12頁(yè)
文件大?。?/td> 426K
代理商： AD660BN
AD660
REV. A
–3–
Ratio, these characteristics are included for design guidance only and are not subject to test. THD+N and SNR are 100% tested.
T
MIN
≤
T
A
≤
T
MAX
, V
CC
= +15 V, V
EE
= –15 V, V
LL
= +5 V except where noted.)
Parameter
Limit
Units
Test Conditions/Comments
Output Settling Time
(Time to
±
0.0008% FS
with 2 k
, 1000 pF Load)
13
8
10
6
8
2.5
μ
s max
μ
s typ
μ
s typ
μ
s typ
μ
s typ
μ
s typ
20 V Step, T
A
= +25
°
C
20 V Step, T
A
= +25
°
C
20 V Step, T
MIN
≤
T
A
≤
T
MAX
10 V Step, T
A
= +25
°
C
10 V Step, T
MIN
≤
T
A
≤
T
MAX
1 LSB Step, T
MIN
≤
T
A
≤
T
MAX
Total Harmonic Distortion + Noise
A, B, S Grade
A, B, S Grade
A, B, S Grade
0.009
0.056
5.6
% max
% max
% max
0 dB, 990.5 Hz; Sample Rate = 96 kHz; T
A
= +25
°
C
–20 dB, 990.5 Hz; Sample Rate = 96 kHz; T
A
= +25
°
C
–60 dB, 990.5 Hz; Sample Rate = 96 kHz; T
A
= +25
°
C
Signal-to-Noise Ratio
83
dB min
T
A
= +25
°
C
Digital-to-Analog Glitch Impulse
15
nV-s typ
DAC Alternately Loaded with 8000
H
and 7FFF
H
Digital Feedthrough
2
nV-s typ
DAC Alternately Loaded with 0000
H
and FFFF
H
;
CS
High
Output Noise Voltage
Density (1 kHz – 1 MHz)
120
nV/
√
Hz
typ
Measured at V
OUT
; 20 V Span; Excludes Reference
Reference Noise
125
nV/
√
Hz
typ
Measured at REF OUT
Specifications subject to change without notice.
AC PERFORMANCE CHARACTERISTICS
WARNING!
ESD SENSITIVE DEVICE
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD660 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS*
V
CC
to AGND . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +17.0 V
V
EE
to AGND . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –17.0 V
V
LL
to DGND . . . . . . . . . . . . . . . . . . . . . . . . . .–0.3 V to +7 V
AGND to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
1 V
Digital Inputs (Pins 5 through 23) to DGND . . . . . . –1.0 V to
+7.0 V
REF IN to AGND . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
10.5 V
Span/Bipolar Offset to AGND . . . . . . . . . . . . . . . . . . .
±
10.5 V
Ref Out, V
OUT
. . . . . . . Indefinite Short to AGND, DGND,
V
CC
, V
EE
, and V
LL
Power Dissipation (Any Package)
To +60
°
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000 mW
Derates above +60
°
C . . . . . . . . . . . . . . . . . . . . 8.7 mW/
°
C
Storage Temperature . . . . . . . . . . . . . . . . . . .–65
°
C to +150
°
C
Lead Temperature Range
(Soldering 10 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . +300
°
C
*Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PIN CONFIGURATION
1
2
3
7
24
23
22
18
8
9
10
17
16
15
11
12
14
13
4
5
21
20
6
19
TOP VIEW
(Not to Scale)
AD660
DB7, 15
S
OUT
SPAN,
BIPOLAR OFFSET
V
OUT
AGND
REF OUT
REF IN
LDAC
DGND
–V
EE
+V
CC
+V
LL
CS
HBE
SER
CLR
DB6, 14
DB5, 13
DB4, 12
DB3, 11
DB2, 10
DB0, 8, SIN
DB1, 9, MSB/LSB
LBE, UNI/BIP CLEAR
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