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參數(shù)資料
| 型號： | AD587JR |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | High Precision 10 V Reference |
| 中文描述： | 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 10 V, PDSO8 |
| 封裝： | MS-012AA, SOIC-8 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 116K |
| 代理商： | AD587JR |
AD587
REV. D
–3–
ABSOLUTE MAXIMUM RATINGS*
V
IN
to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V
Power Dissipation (+25
°
C) . . . . . . . . . . . . . . . . . . . . . 500 mW
Storage Temperature . . . . . . . . . . . . . . . . . . . –65
°
C to +150
°
C
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . +300
°
C
Package Thermal Resistance
θ
JC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
°
C/W
θ
JA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
°
C/W
Output Protection: Output safe for indefinite short to ground and
momentary short to V
IN
.
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
DIE SPECIFICATIONS
The following specifications are tested at the die level for AD587JCHIPS. These die are probed at +25
°
C only.
(T
A
= +25
°
C, V
IN
= +15 V unless otherwise noted)
AD587JCHIPS
Min
Typ
Parameter
Max
Units
Output Voltage
9.990
10.010 V
Gain Adjustment
–1
3
%
Line Regulation
13.5 V < + V
IN
< 36 V
100
±μ
V/V
Load Regulation
Sourcing 0 < I
OUT
< 10 mA
Sinking –10 < I
OUT
< 0 mA
100
100
μ
V/mA
μ
V/mA
Quiescent Current
2
4
mA
Short-Circuit Current-to-Ground
70
mA
Short-Circuit Currrent-to-V
OUT
70
mA
NOTES
1
Both V
pads should be connected to the output.
2
Sense and force grounds must be tied together.
Die Thickness:
The
standard thickness of Analog Devices Bipolar dice is 24 mils
±
2 mils.
Die Dimensions:
The dimensions given have a tolerance of
±
2 mils.
Backing
: The standard backside surface is silicon (not plated). Analog Devices does not recommend
gold-backed dice for most applications.
Edges:
A diamond saw is used to separate wafers into dice thus providing perpendicular edges half-
way through the die.
In contrast to scribed dice, this technique provides a more uniform die shape and size . The perpen-
dicular edges facilitate handling (such as tweezer pick-up) while the uniform shape and size simplifies
substrate design and die attach.
Top Surface:
The standard top surface of the die is covered by a layer of glassivation . All areas are
covered except bonding pads and scribe lines.
Surface Metalization:
The metalization to Analog Devices bipolar dice is aluminum. Minimum
thickness is 10,000.
Bonding Pads:
All bonding pads have a minimum size of 4 mils by 4 mils. The passivation windows
have 3.5 mils by 3.5 mils minimum.
DIE LAYOUT
PIN CONFIGURATION
1
2
3
4
8
7
6
5
TOP VIEW
(Not to Scale)
AD587
TP
*
TRIM
V
OUT
TP
*
NOISE
REDUCTION
+V
IN
TP
*
GND
*
TP DENOTES FACTORY TEST POINT.
NO CONNECTIONS SHOULD BE MADE
TO THESE PINS.
Die Size: 0.081
×
0.060 Inches
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| AD587JRZ1 | 制造商:AD 制造商全稱:Analog Devices 功能描述:High Precision 10 V Reference |
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