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參數(shù)資料
| 型號： | AD5232BRU10 |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 數(shù)字電位計 |
| 英文描述： | 8-Bit Dual Nonvolatile Memory Digital Potentiometer |
| 中文描述： | DUAL 10K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO16 |
| 封裝： | MO-153AB, TSSOP-16 |
| 文件頁數(shù)： | 15/20頁 |
| 文件大小： | 268K |
| 代理商： | AD5232BRU10 |
REV. 0
AD5232
–15–
~
OFFSET BIAS
OFFSET
GND
A
B
DUT
W
5V
V
IN
V
OUT
OP279
Figure 18. Noninverting Gain Test Circuit
~
OFFSET
GND
A
B
DUT
W
+15V
V
IN
V
OUT
OP42
–
15V
2.5V
Figure 19. Gain vs. Frequency Test Circuit
+
_
DUT
CODE = OO
H
0.1V
V
SS
TO V
DD
R
SW
= I
SW
I
SW
W
B
Figure 20. Incremental ON Resistance Test Circuit
DUT
V
SS
I
CM
W
B
V
NC
NC
V
CM
GND
A
NC = NO CONNECT
Figure 21. Common-Mode Leakage Current Test Circuit
W2
B2
V
DD
A2
~
V
IN
NC
W1
RDAC
1
A1
B1 V
SS
V
OUT
RDAC
2
C
TA
= 20 log [V
OUT
/V
IN
]
Figure 22. Analog Crosstalk Test Circuit
Flash/E E ME M Reliability
T he Flash/EE Memory array on the AD5232 is fully qualified
for two key Flash/EE memory characteristics, namely Flash/EE
Memory C ycling Endurance and F lash/EE Memory Data
Retention.
Endurance quantifies the ability of the Flash/EE memory to be
cycled through many Program, Read, and Erase cycles. In real
terms, a single endurance cycle is composed of four indepen-
dent, sequential events. T hese events are defined as:
a. Initial page erase sequence
b. Read/verify sequence
c. Byte program sequence
d. Second read/verify sequence
During reliability qualification Flash/EE memory is cycled from
00
H
to FF
H
until a first fail is recorded, signifying the endurance
limit of the on-chip Flash/EE memory.
As indicated in the specification pages of this data sheet, the
AD5232 Flash/EE Memory Endurance qualification has been
carried out in accordance with JEDEC Specification A117 over
the industrial temperature range of –40
°
C to +85
°
C. T he results
allow the specification of a minimum endurance figure over supply
and temperature of 100,000 cycles, with an endurance figure of
700,000 cycles being typical of operation at 25
°
C.
Retention quantifies the ability of the Flash/EE memory to retain
its programmed data over time. Again, the AD5232 has been
qualified in accordance with the formal JEDEC Retention Life-
time Specification (A117) at a specific junction temperature
(T
J
= 55
°
C). As part of this qualification procedure, the Flash/EE
memory is cycled to its specified endurance limit described above,
before data retention is characterized. T his means that the Flash/EE
memory is guaranteed to retain its data for its full-specified reten-
tion lifetime every time the Flash/EE memory is reprogrammed. It
should also be noted that retention lifetime, based on an activa-
tion energy of 0.6 eV, will derate with T
J
as shown in Figure 23.
T
J
JUNCTION TEMPERATURE
–
C
300
250
0
40
R
–
200
150
100
50
50
60
70
80
90
100
110
ADI TYPICAL
PERFORMANCE
AT
T
J
= 55 C
Figure 23. Flash/EE Memory Data Retention
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| AD5232BRU100 | 功能描述:IC DGTL POT DUAL 256POS 16-TSSOP RoHS:否 類別:集成電路 (IC) >> 數(shù)據(jù)采集 - 數(shù)字電位器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:XDCP™ 接片:256 電阻（歐姆）:100k 電路數(shù):1 溫度系數(shù):標(biāo)準(zhǔn)值 ±300 ppm/°C 存儲器類型:非易失 接口:I²C（設(shè)備位址） 電源電壓:2.7 V ~ 5.5 V 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:14-TSSOP（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:14-TSSOP 包裝:帶卷 (TR) |
| AD5232BRU100-REEL7 | 功能描述:IC DGTL POT DUAL 256POS 16-TSSOP RoHS:否 類別:集成電路 (IC) >> 數(shù)據(jù)采集 - 數(shù)字電位器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:DPP 接片:32 電阻（歐姆）:10k 電路數(shù):1 溫度系數(shù):標(biāo)準(zhǔn)值 300 ppm/°C 存儲器類型:非易失 接口:3 線串行（芯片選擇，遞增，增/減） 電源電壓:2.5 V ~ 6 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:8-WFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-TDFN（2x3） 包裝:帶卷 (TR) |
| AD5232BRU10-REEL7 | 功能描述:IC DGTL POT DUAL 256POS 16-TSSOP RoHS:否 類別:集成電路 (IC) >> 數(shù)據(jù)采集 - 數(shù)字電位器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:DPP 接片:32 電阻（歐姆）:10k 電路數(shù):1 溫度系數(shù):標(biāo)準(zhǔn)值 300 ppm/°C 存儲器類型:非易失 接口:3 線串行（芯片選擇，遞增，增/減） 電源電壓:2.5 V ~ 6 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:8-WFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-TDFN（2x3） 包裝:帶卷 (TR) |
| AD5232BRU50 | 功能描述:IC DGTL POT DUAL 256POS 16-TSSOP RoHS:否 類別:集成電路 (IC) >> 數(shù)據(jù)采集 - 數(shù)字電位器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:DPP 接片:32 電阻（歐姆）:10k 電路數(shù):1 溫度系數(shù):標(biāo)準(zhǔn)值 300 ppm/°C 存儲器類型:非易失 接口:3 線串行（芯片選擇，遞增，增/減） 電源電壓:2.5 V ~ 6 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:8-WFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-TDFN（2x3） 包裝:帶卷 (TR) |
| AD5232BRU50-REEL7 | 功能描述:IC DGTL POT DUAL 256POS 16-TSSOP RoHS:否 類別:集成電路 (IC) >> 數(shù)據(jù)采集 - 數(shù)字電位器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:XDCP™ 接片:256 電阻（歐姆）:100k 電路數(shù):1 溫度系數(shù):標(biāo)準(zhǔn)值 ±300 ppm/°C 存儲器類型:非易失 接口:I²C（設(shè)備位址） 電源電壓:2.7 V ~ 5.5 V 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:14-TSSOP（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:14-TSSOP 包裝:帶卷 (TR) |
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